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参数资料
| 型号： | IXFN180N15P |
| 厂商： | IXYS |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 150V 150A SOT-227B |
| 产品目录绘图： | SOT-227, SOT-227B miniBLOC |
| 标准包装： | 10 |
| 系列： | PolarHT™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 150V |
| 电流 - 连续漏极(Id) @ 25° C： | 150A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 11 毫欧 @ 90A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 4mA |
| 闸电荷(Qg) @ Vgs： | 240nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 7000pF @ 25V |
| 功率 - 最大： | 680W |
| 安装类型： | 底座安装 |
| 封装/外壳： | SOT-227-4，miniBLOC |
| 供应商设备封装： | SOT-227B |
| 包装： | 管件 |
PolarHT TM HiPerFET IXFN 180N15P
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
V DSS
I D25
R DS(on)
t rr
= 150 V
= 150 A
≤ 11 m ?
≤ 200 ns
Symbol
Test Conditions
Maximum Ratings
miniBLOC, SOT-227 B (IXFN)
V DSS
V DGR
V DSS
V GSM
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C; R GS = 1 M ?
Continuous
Transient
150
150
± 20
± 30
V
V
V
V
E153432
G
S
I D25
I D(RMS)
I DM
T C = 25 ° C
External lead current limit
T C = 25 ° C, pulse width limited by T JM
150
100
380
A
A
A
D
S
I AR
E AR
E AS
dv/dt
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
60
100
4
10
A
mJ
J
V/ns
G = Gate D = Drain
S = Source
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
T J ≤ 150 ° C, R G = 4 ?
P D
T C = 25 ° C
680
W
Fast recovery diode
Unclamped Inductive Switching (UIS)
T J
T JM
T stg
M d
V ISOL
T L
Mounting torque
Terminal connection torque (M4)
50/60 Hz t = 1 min
I ISOL ≤ 1 mA t = 1 s
1.6 mm (0.062 in.) from case for 10 s
-55 ... +175 ° C
175 ° C
-55 ... +150 ° C
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
2500 V~
3000 V~
300 ° C
Features
? International standard package
? Encapsulating epoxy meets
UL 94 V-0, flammability classification
? miniBLOC with Aluminium nitride
isolation
l
l
Weight
30
g
l
rated
Low package inductance
- easy to drive and to protect
Symbol Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
Min. Typ. Max.
Advantages
V DSS
V GS = 0 V, I D = 250 μ A
150
V
l
Easy to mount
V GS(th)
V DS = V GS , I D = 4 mA
2.5
5.0
V
l
l
Space savings
High power density
I GSS
V GS = ± 20 V DC , V DS = 0
± 100
nA
I DSS
V DS = V DSS, V GS = 0 V
T J = 150 ° C
25
500
μ A
μ A
R DS(on)
V GS = 10 V, I D = 90 A
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
11
m ?
? 2006 IXYS All rights reserved
DS99241E(01/06)
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PDF描述 |
|---|---|
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IXFN180N20 | 功能描述:MOSFET 200V 180A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXFN180N20 | 制造商:IXYS Corporation 功能描述:MOSFET N SOT-227B 制造商:IXYS Corporation 功能描述:MOSFET, N, SOT-227B 制造商:IXYS Corporation 功能描述:MOSFET, N, SOT-227B; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:200V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:700W ;RoHS Compliant: Yes |
| IXFN180N25T | 功能描述:MOSFET 155A 250V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXFN185N10 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 100V V(BR)DSS | 185A I(D) |
| IXFN200N06 | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HiPerFET Power MOSFETs |
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