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参数资料
| 型号： | IXFN260N17T |
| 厂商： | IXYS |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 245A 170V SOT-227 |
| 产品目录绘图： | SOT-227, SOT-227B miniBLOC |
| 标准包装： | 10 |
| 系列： | GigaMOS™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 170V |
| 电流 - 连续漏极(Id) @ 25° C： | 245A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 6.5 毫欧 @ 60A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 8mA |
| 闸电荷(Qg) @ Vgs： | 400nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 24000pF @ 25V |
| 功率 - 最大： | 1090W |
| 安装类型： | 底座安装 |
| 封装/外壳： | SOT-227-4，miniBLOC |
| 供应商设备封装： | SOT-227B |
| 包装： | 管件 |
Advance Technical Information
GigaMOS TM
Power MOSFET
IXFN260N17T
V DSS =
I D25 =
R DS(on) ≤
t rr ≤
170V
245A
6.5m Ω
200ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
miniBLOC, SOT-227
E153432
S
Symbol
V DSS
V DGR
Test Conditions
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C, R GS = 1M Ω
Maximum Ratings
170
170
V
V
G
V GSS
V GSM
Continuous
Transient
± 20
± 30
V
V
D
S
I D25
T C = 25 ° C
245
A
G = Gate
D = Drain
I L(RMS)
I DM
I A
E AS
dV/dt
P D
T J
T JM
T stg
T L
T SOLD
V ISOL
M d
Weight
External Lead Current Limit
T C = 25 ° C, Pulse Width Limited by T JM
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150°C
T C = 25 ° C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, RMS t = 1 minute
I ISOL ≤ 1mA t = 1 second
Mounting Torque
Terminal Connection Torque
200
700
100
3
20
1090
-55 ... +175
175
-55 ... +175
300
260
2500
3000
1.5/13
1.3/11.5
30
A
A
A
J
V/ns
W
° C
° C
° C
° C
° C
V~
V~
Nm/lb.in.
Nm/lb.in.
g
S = Source
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
( Gate Return ) Terminal.
Features
International Standard Package
miniBLOC, with Aluminium Nitride
Isolation
Isolation voltage 2500 V~
High Current Handling Capability
Fast Intrinsic Diode
Avalanche Rated
Low R DS(on)
Advantages
Easy to Mount
Space Savings
High Power Density
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
Applications
BV DSS
V GS = 0V, I D = 3mA
170
V
Synchronous Recification
V GS(th)
I GSS
V DS = V GS , I D = 8mA
V GS = ± 20V, V DS = 0V
2.5
5.0
± 200
V
nA
DC-DC Converters
Battery Chargers
Switched-Mode and Resonant-Mode
I DSS
R DS(on)
V DS = V DSS , V GS = 0V
V GS = 10V, I D = 60A, Note 1
T J = 150 ° C
50 μ A
5 mA
6.5 m Ω
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
? 2009 IXYS CORPORATION, All Rights Reserved
DS100137(03/09)
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| IXFN26N120P | 功能描述:MOSFET 26 Amps 1200V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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