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| 型号： | IXFP110N15T2 |
| 厂商： | IXYS |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 150V 110A TO-220 |
| 标准包装： | 50 |
| 系列： | * |
Preliminary Technical Information
TrenchT2 TM HiperFET
Power MOSFET
IXFA110N15T2
IXFP110N15T2
V DSS
I D25
R DS(on)
= 150V
= 110A
≤ 13m Ω
N-Channel Enhancement Mode
Avalanche Rated
TO-263
Symbol
V DSS
V DGR
V GSS
V GSM
Test Conditions
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C, R GS = 1M Ω
Continuous
Transient
Maximum Ratings
150
150
± 20
± 30
V
V
V
V
G
TO-220
S
(TAB)
I D25
T C = 25 ° C
110
A
I DM
I A
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
300
50
A
A
G
D
S
(TAB)
E AS
T C = 25 ° C
800
mJ
dV/dt
P D
I S ≤ I DM ,, V DD ≤ V DSS ,T J ≤ 175 ° C
T C = 25 ° C
15
480
V/ns
W
G = Gate
S = Source
D = Drain
TAB = Drain
T J
T JM
T stg
-55 ... +175
175
-55 ... +175
° C
° C
° C
Features
International standard packages
T L
T sold
M d
Weight
1.6mm (0.062in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-220)
TO-263
TO-220
300
260
1.13 / 10
2.5
3.0
° C
° C
Nm/lb.in.
g
g
175°C Operating Temperature
High current handling capability
Fast intrinsic Rectifier
Dynamic dV/dt rated
Low R DS(on)
Advantages
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
BV DSS V GS = 0V, I D = 250 μ A
Characteristic Values
Min. Typ. Max.
150 V
Easy to mount
Space savings
High power density
V GS(th)
V DS = V GS , I D = 250 μ A
2.5
4.5
V
Applications
I GSS
V GS = ± 20V, V DS = 0V
± 200 nA
DC-DC converters
I DSS
R DS(on)
V DS = V DSS
V GS = 0V T J = 150 ° C
V GS = 10V, I D = 0.5 ? I D25 , Notes 1, 2
11
5 μ A
150 μ A
13 m Ω
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor drives
Uninterruptible power supplies
High speed power switching
applications
? 2008 IXYS CORPORATION, All rights reserved
DS100093(12/08)
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