参数资料
型号: IXFX120N25P
厂商: IXYS
文件页数: 1/5页
文件大小: 0K
描述: MOSFET N-CH 250V 120A PLUS247
标准包装: 25
系列: PolarHT™ HiPerFET™
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 250V
电流 - 连续漏极(Id) @ 25° C: 120A
开态Rds(最大)@ Id, Vgs @ 25° C: 24 毫欧 @ 60A,10V
Id 时的 Vgs(th)(最大): 5V @ 4mA
闸电荷(Qg) @ Vgs: 185nC @ 10V
输入电容 (Ciss) @ Vds: 8000pF @ 25V
功率 - 最大: 700W
安装类型: 通孔
封装/外壳: TO-247-3
供应商设备封装: PLUS247?-3
包装: 管件
I D25
PolarHT TM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
IXFK 120N25P
IXFX 120N25P
V DSS = 250 V
= 120 A
R DS(on) ≤ 24 m Ω
t rr ≤ 200 ns
Symbol
Test Conditions
Maximum Ratings
V DSS
V DGR
V GS
V GSM
I D25
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C; R GS = 1 M Ω
Continuous
Transient
T C = 25 ° C
250
250
± 20
± 30
120
V
V
V
V
A
TO-264 (IXFK)
I D(RMS)
I DM
External lead current limit
T C = 25 ° C, pulse width limited by T JM
75
300
A
A
G
D
S
(TAB)
I AR
T C = 25 ° C
60
A
E AR
E AS
dv/dt
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
60
2.5
10
mJ
J
V/ns
PLUS247 (IXFX)
T J ≤ 150 ° C, R G = 4 Ω
P D
T J
T JM
T stg
T L
T SOLD
T C = 25 ° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
700
-55 ... +175
175
-55 ... +150
300
260
W
° C
° C
° C
° C
° C
G = Gate
S = Source
(TAB)
D = Drain
TAB = Drain
M d
Mounting torque
1.13/10 Nm/lb.in.
Weight
TO-264
PLUS247
10
6
g
g
Features
International standard packages
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
Unclamped Inductive Switching (UIS)
rated
Low package inductance
BV DSS
V GS = 0 V, I D = 250 μ A
250
V
- easy to drive and to protect
V GS(th)
V DS = V GS , I D = 4 mA
2.5
5.0
V
I GSS
V GS = ± 20 V, V DS = 0 V
± 200
nA
Advantages
I DSS
V DS = V DSS
V GS = 0 V
T J = 125 ° C
25
250
μ A
μ A
Easy to mount
Space savings
High power density
R DS(on)
V GS = 10 V, I D = 0.5 I D25
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
19
24
m Ω
? 2006 IXYS All rights reserved
DS99379E(03/06)
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