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参数资料
| 型号： | IXFX55N50F |
| 厂商： | IXYS |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 500V 55A PLUS247 |
| 标准包装： | 30 |
| 系列： | HiPerRF™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 500V |
| 电流 - 连续漏极(Id) @ 25° C： | 55A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 85 毫欧 @ 500mA，10V |
| Id 时的 Vgs(th)（最大）： | 5.5V @ 8mA |
| 闸电荷(Qg) @ Vgs： | 195nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 6700pF @ 25V |
| 功率 - 最大： | 560W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | PLUS247?-3 |
| 包装： | 管件 |
| 其它名称： | Q1649656 |
IXFK55N50F
IXFX55N50F
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
TO-264 (IXFK) Outline
g fs
C iss
C oss
C rss
V DS = 10V, I D = 0.5 ? I D25 , Note 1
V GS = 0V, V DS = 25V, f = 1MHz
22
33
6700
1250
330
S
pF
pF
pF
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
R thJC
R thCS
Resistive Switching Times
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 1 Ω (External)
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
24
20
45
9.6
195
50
95
0.15
0.21
ns
ns
ns
ns
nC
nC
nC
° C/W
° C/W
Dim.
A
A1
A2
b
b1
b2
c
D
E
Millimeter
Min. Max.
4.82 5.13
2.54 2.89
2.00 2.10
1.12 1.42
2.39 2.69
2.90 3.09
0.53 0.83
25.91 26.16
19.81 19.96
Inches
Min. Max.
.190 .202
.100 .114
.079 .083
.044 .056
.094 .106
.114 .122
.021 .033
1.020 1.030
.780 .786
e
J
K
L
L1
P
Q
5.46 BSC
0.00 0.25
0.00 0.25
20.32 20.83
2.29 2.59
3.17 3.66
6.07 6.27
.215 BSC
.000 .010
.000 .010
.800 .820
.090 .102
.125 .144
.239 .247
Source-Drain Diode
Q1
R
R1
8.38 8.69
3.81 4.32
1.78 2.29
.330 .342
.150 .170
.070 .090
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
S
T
6.04 6.30
1.57 1.83
.238 .248
.062 .072
I S
I SM
V SD
V GS = 0V
Repetitive, Pulse Width Limited by T JM
I F = 25A, V GS = 0V, Note 1
55
220
1.5
A
A
V
PLUS 247 TM (IXFX) Outline
t rr
Q RM
I RM
I F = 25A, -di/dt = 100A/ μ s
V R = 100V, V GS = 0V
1
10
250
ns
μ C
A
Note: 1. Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
2. See IXFN55N50F Datasheet for Characteristic Curves
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim.
A
A 1
A 2
Millimeter
Min. Max.
4.83 5.21
2.29 2.54
1.91 2.16
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
b
b 1
b 2
C
D
E
e
L
L1
Q
R
1.14 1.40
1.91 2.13
2.92 3.12
0.61 0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81 4.32
5.59 6.20
4.32 4.83
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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