参数资料
型号: IXKP20N60C5
厂商: IXYS
文件页数: 1/4页
文件大小: 0K
描述: MOSFET N-CH 600V 20A TO220AB
标准包装: 50
系列: CoolMOS™
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 600V
电流 - 连续漏极(Id) @ 25° C: 20A
开态Rds(最大)@ Id, Vgs @ 25° C: 200 毫欧 @ 10A,10V
Id 时的 Vgs(th)(最大): 3.5V @ 1.1mA
闸电荷(Qg) @ Vgs: 45nC @ 10V
输入电容 (Ciss) @ Vds: 1520pF @ 100V
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220AB
包装: 管件
IXKH 20N60C5
IXKP 20N60C5
CoolMOS ? 1) Power MOSFET
N-Channel Enhancement Mode
Low R DSon , High V DSS MOSFET
Ultra low gate charge
G
D
I D25 = 20 A
V DSS = 600 V
R DS(on) max = 0.2 Ω
TO-247 AD (IXKH)
G
D
S
D(TAB)
MOSFET
S
TO-220 AB (IXKP)
G
D
S
Features
Symbol
V DSS
Conditions
T VJ = 25°C
Maximum Ratings
600 V
? fast CoolMOS ? 1) power MOSFET
- 4th generation
- High blocking capability
V GS
± 20
V
- Lowest resistance
I D25
I D90
T C = 25°C
T C = 90°C
20
13
A
A
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
E AS
E AR
single pulse
repetitive
I D = 6.6 A; T C = 25°C
435
0.66
mJ
mJ
due to reduced chip thickness
? Enhanced total power density
dV/dt
MOSFET dV/dt ruggedness V DS = 0...480 V
50
V/ns
Applications
Symbol
Conditions
Characteristic Values
(T VJ = 25 ° C, unless otherwise speci?ed)
? Switched mode power supplies
(SMPS)
? Uninterruptible power supplies (UPS)
min.
typ.
max.
? Power factor correction (PFC)
? Welding
R DSon
V GS = 10 V; I D = 10 A
180
200
m Ω
? Inductive heating
V GS(th)
I DSS
V DS = V GS ; I D = 1.1 mA
V DS = 600 V; V GS = 0 V
T VJ = 25°C
2.5
3
3.5
1
V
μA
? PDP and LCD adapter
I GSS
V GS = ± 20 V; V DS = 0 V
T VJ = 125°C
10
100
μA
nA
1)
CoolMOS ? is a trademark of
In?neon Technologies AG.
C iss
C oss
V GS = 0 V; V DS = 100 V
f = 1 MHz
1520
72
pF
pF
Q g
32
45
nC
Q gs
Q gd
t d(on)
t r
t d(off)
t f
R thJC
V GS = 0 to 10 V; V DS = 400 V; I D = 10 A
V GS = 10 V; V DS = 400 V
I D = 10 A; R G = 3.3 Ω
8
11
10
5
50
5
0.60
nC
nC
ns
ns
ns
ns
K/W
IXYS reserves the right to change limits, test conditions and dimensions.
? 2008 IXYS All rights reserved
20080523d
1-4
相关PDF资料
PDF描述
5150.0021.0 MODULE PWR ENTRY 15A 250V SCREW
M2013LL1W01 SWITCH TOGGLE SPDT 6A SLDR 5PCS
D3G0603N SWITCH ROTARY 6P-3POS OPEN FRAME
B32656S7125K562 FILM CAP 1.200UF 10% 1250V
5150.0011.1 MODULE PWR ENTRY 15A 250V SCREW
相关代理商/技术参数
参数描述
IXKP20N60C5M 功能描述:MOSFET 20 Amps 600V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXKP24N60C5 功能描述:MOSFET 24 Amps 600V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXKP24N60C5M 功能描述:MOSFET 24 Amps 600V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXKP35N60C5 功能描述:MOSFET 35 Amps 600V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXKR25N80C 功能描述:MOSFET 25 Amps 800V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube