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| 型号： | IXTA76N075T |
| 厂商： | IXYS |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 75V 76A TO-263 |
| 标准包装： | 50 |
| 系列： | TrenchMV™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 75V |
| 电流 - 连续漏极(Id) @ 25° C： | 76A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 12 毫欧 @ 25A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 50µA |
| 闸电荷(Qg) @ Vgs： | 57nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2580pF @ 25V |
| 功率 - 最大： | 176W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263 |
| 包装： | 管件 |
Preliminary Technical Information
TrenchMV TM
Power MOSFET
IXTA76N075T
IXTP76N075T
V DSS =
I D25 =
R DS(on) ≤
75 V
76 A
12 m Ω
N-Channel Enhancement Mode
Avalanche Rated
Symbol
Test Conditions
Maximum Ratings
TO-263 (IXTA)
V DSS
V DGR
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C; R GS = 1 M Ω
75
75
V
V
V GSM
Transient
± 20
V
G
S
I D25
I LRMS
I DM
I AR
E AS
T C = 25 ° C
Lead Current Limit, RMS
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
76
75
210
10
500
A
A
A
A
mJ
TO-220 (IXTP)
(TAB)
dv/dt
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS
T J ≤ 175 ° C, R G = 10 Ω
3
V/ns
G
D
S
(TAB)
P D
T J
T JM
T stg
T C = 25 ° C
176
-55 ... +175
175
-55 ... +175
W
° C
° C
° C
G = Gate
S = Source
Features
D = Drain
TAB = Drain
T L
T SOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
300
260
° C
° C
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
M d
Mounting torque (TO-220)
1.13 / 10 Nm/lb.in.
Low package inductance
- easy to drive and to protect
Weight
TO-220
TO-263
3
2.5
g
g
175 ° C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
Applications
BV DSS
V GS = 0 V, I D = 250 μ A
75
V
Automotive
- Motor Drives
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 50 μ A
V GS = ± 20 V, V DS = 0 V
V DS = V DSS
V GS = 0 V
T J = 150 ° C
2.0
4.0
± 100
1
250
V
nA
μ A
μ A
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
High Current Switching
R DS(on)
V GS = 10 V, I D = 25 A, Notes 1, 2
9.7
12
m Ω
Applications
DS99632 (11/06)
? 2006 IXYS CORPORATION All rights reserved
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