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| 型号： | IXTA98N075T |
| 厂商： | IXYS |
| 文件页数： | 2/2页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 75V 98A TO-263 |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 75V |
| 电流 - 连续漏极(Id) @ 25° C： | 98A |
| Id 时的 Vgs(th)（最大）： | 4V @ 100µA |
| 功率 - 最大： | 200W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263 |
| 包装： | 管件 |
IXTA98N075T IXTP98N075T
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
TO-263 (IXTA) Outline
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
V DS = 10 V; I D = 0.5 I D25 , Note 1
V GS = 0 V, V DS = 25 V, f = 1 MHz
Resistive Switching Times
V GS = 10 V, V DS = 0.5 V DSS , I D = 25 A
R G = 5 Ω (External)
38
64
3100
520
125
20
42
42
S
pF
pF
pF
ns
ns
ns
t f
27
ns
Pins: 1 - Gate
2 - Drain
3 - Source
4, TAB - Drain
Q g(on)
68
nC
Q gs
V GS = 10 V, V DS = 0.5 V DSS , I D = 25 A
18
nC
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
Q gd
R thJC
R thCS
15
0.50
nC
0.65 ° C/W
° C/W
A
A1
b
b2
c
c2
4.06
2.03
0.51
1.14
0.46
1.14
4.83
2.79
0.99
1.40
0.74
1.40
.160
.080
.020
.045
.018
.045
.190
.110
.039
.055
.029
.055
D
D1
E
E1
e
L
L1
8.64
7.11
9.65
6.86
2.54
14.61
2.29
9.65
8.13
10.29
8.13
BSC
15.88
2.79
.340
.280
.380
.270
.100
.575
.090
.380
.320
.405
.320
BSC
.625
.110
Source-Drain Diode
Symbol Test ConditionsCharacteristic Values
L2
L3
L4
1.02
1.27
0
1.40
1.78
0.38
.040
.050
0
.055
.070
.015
(T J = 25 ° C unless otherwise specified)
Min.
Typ.
Max.
R
0.46
0.74
.018
.029
I S
I SM
V SD
t rr
V GS = 0 V
Repetitive
I F = I S , V GS = 0 V, Note 1
I F = 49 A, -di/dt = 100 A/ μ s
50
98
280
1.5
A
A
V
ns
TO-220 (IXTP) Outline
V R = 40 V, V GS = 0 V
Note 1. Pulse test, t ≤ 300 μ s, duty cycle, d ≤ 2 %;
2. On through-hole packages, R DS(on) Kelvin test contact
location is 5 mm or less from the package body.
Pins:
1 - Gate 2 - Drain
3 - Source 4, TAB - Drain
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience,
and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change
limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or moreof the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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