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参数资料
| 型号： | IXTH130N15T |
| 厂商： | IXYS |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 150V 130A TO-247 |
| 标准包装： | 30 |
| 系列： | TrenchHV™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 150V |
| 电流 - 连续漏极(Id) @ 25° C： | 130A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 12 毫欧 @ 65A，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 113nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 9800pF @ 25V |
| 功率 - 最大： | 750W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
IXTH130N15T
IXTQ130N15T
Symbol
Test Conditions
Characteristic Values
TO-247AD Outline
(T J = 25°C unless otherwise specified)
Min.
Typ.
Max.
g fs
C iss
V DS = 10 V; I D = 60 A, Note 1
60
100
9800
S
pF
C oss
V GS = 0 V, V DS = 25 V, f = 1 MHz
1450
pF
1
2
3
C rss
320
pF
t d(on)
t r
t d(off)
Resistive Switching Times
V GS = 10 V, V DS = 0.5 V DSS , I D = 0.5 I D25
R G = 2.5 Ω (External)
23
16
57
ns
ns
ns
t f
27
ns
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
Q g(on)
113
nC
Dim.
Millimeter
Inches
Q gs
V GS = 10 V, V DS = 0.5 V DSS , I D = 0.5 I D25
32
nC
Min.
Max.
Min.
Max.
A 1
A 2
Q gd
R thJC
31
nC
0.20 °C/W
A 4.7 5.3
2.2 2.54
2.2 2.6
b 1.0 1.4
.185 .209
.087 .102
.059 .098
.040 .055
R thCS
0.25
°C/W
b 1
b 2
1.65 2.13
2.87 3.12
.065 .084
.113 .123
C .4 .8
D 20.80 21.46
.016 .031
.819 .845
Source-Drain Diode
E 15.75 16.26
.610 .640
Symbol
Test Conditions
Characteristic Values
e 5.20 5.72
L 19.81 20.32
0.205 0.225
.780 .800
T J = 25°C unless otherwise specified)
Min.
Typ.
Max.
L1 4.50
.177
?P 3.55 3.65
.140 .144
I S
I SM
V SD
t rr
V GS = 0 V
Pulse width limited by T JM
I F = 50 A, V GS = 0 V, Note 1
I F = 50 A, -di/dt = 100 A/ μ s
100
130
330
1.2
A
A
V
ns
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
TO-3P (IXTQ) Outline
0.232 0.252
.170 .216
242 BSC
V R = 25 V, V GS = 0 V
Notes: 1. Pulse test, t ≤ 300 ms, duty cycle, d ≤ 2 %;
2. On through-hole packages, R DS(on) Kelvin test contact
location must be 5 mm or less from the package body.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
Pins: 1 - Gate
3 - Source
2 - Drain
4, TAB - Drain
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405 B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
7,005,734 B2 7,157,338B2
7,063,975 B2
7,071,537
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IXTH130N20T | 功能描述:MOSFET 130Amps 200V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXTH13N110 | 功能描述:MOSFET 13 Amps 1100V 0.92 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXTH13N65 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 13A I(D) | TO-218VAR |
| IXTH13N80 | 功能描述:MOSFET 13 Amps 800V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXTH13N90 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 13A I(D) | TO-218VAR |
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