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参数资料
| 型号： | IXTH16P60P |
| 厂商： | IXYS |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 600V 16A TO-247 |
| 产品目录绘图： | TO-247AD 3-Leads |
| 标准包装： | 30 |
| 系列： | PolarP™ |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 16A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 720 毫欧 @ 500mA，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 92nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 5120pF @ 25V |
| 功率 - 最大： | 460W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
IXTH16P60P
IXTT16P60P
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
TO-247 (IXTH) Outline
g fs
C iss
V DS = -10V, I D = 0.5 ? I D25 , Note 1
11
18
5120
S
pF
C oss
V GS = 0V, V DS = - 25V, f = 1MHz
445
pF
1
2
3
?P
C rss
60
pF
t d(on)
t r
t d(off)
t f
Resistive Switching Times
V GS = -10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 3 Ω (External)
29
25
60
38
ns
ns
ns
ns
Terminals: 1 - Gate
e
2 - Drain
Q g(on)
Q gs
V GS = -10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
92
27
nC
nC
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
Q gd
R thJC
R thCS
23
0.21
nC
0.27 ° C/W
° C/W
A 4.7 5.3
A 1 2.2 2.54
A 2 2.2 2.6
b 1.0 1.4
b 1 1.65 2.13
b 2 2.87 3.12
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
C .4 .8
.016 .031
Source-Drain Diode
D 20.80 21.46
E 15.75 16.26
.819 .845
.610 .640
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
I S V GS = 0V
I SM Repetitive, pulse width limited by T JM
Characteristic Values
Min. Typ. Max.
- 16 A
- 64 A
e 5.20 5.72
L 19.81 20.32
L1 4.50
? P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
V SD
t rr
Q RM
I RM
I F = - 8A, V GS = 0V, Note 1
I F = - 8A, -di/dt = -150A/ μ s
V R = - 100V, V GS = 0V
440
7.4
- 33.6
- 2.8
V
ns
μ C
A
TO-268 (IXTT) Outline
Note 1: Pulse test, t ≤ 300 μ s; duty cycle, d ≤ 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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