- 您现在的位置：买卖IC网 > Datasheet目录461 > IXTH182N055T (IXYS)MOSFET N-CH 55V 182A TO-247 Datasheet资料下载
参数资料
| 型号： | IXTH182N055T |
| 厂商： | IXYS |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 55V 182A TO-247 |
| 标准包装： | 30 |
| 系列： | TrenchMV™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 55V |
| 电流 - 连续漏极(Id) @ 25° C： | 182A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5 毫欧 @ 25A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 114nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 4850pF @ 25V |
| 功率 - 最大： | 360W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
IXTH182N055T
IXTQ182N055T
Symbol
Test Conditions
Characteristic Values
TO-247AD Outline
(T J = 25 ° C unless otherwise specified)
Min.
Typ.
Max.
g fs
C iss
V DS = 10 V; I D = 60 A, Note 1
65
100
4850
S
pF
C oss
V GS = 0 V, V DS = 25 V, f = 1 MHz
954
pF
1
2
3
C rss
212
pF
t d(on)
t r
t d(off)
Resistive Switching Times
V GS = 10 V, V DS = 0.5 V DSS , I D = 25 A
R G = 5 ? (External)
36
35
53
ns
ns
ns
t f
Q g(on)
Q gs
Q gd
R thJC
V GS = 10 V, V DS = 30 V, I D = 25 A
38
114
30
32
ns
nC
nC
nC
0.42 ° C/W
Terminals: 1 - Gate
3 - Source
Dim. Millimeter
Min. Max.
A 4.7 5.3
A 1 2.2 2.54
A 2 2.2 2.6
b 1.0 1.4
2 - Drain
Tab - Drain
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
R thCS
TO-3P
0.25
° C/W
b 1
b 2
1.65 2.13
2.87 3.12
.065 .084
.113 .123
C .4 .8
.016 .031
Source-Drain Diode
D 20.80 21.46
E 15.75 16.26
.819 .845
.610 .640
Symbol Test Conditions
T J = 25 ° C unless otherwise specified)
Min.
Characteristic Values
Typ. Max.
e 5.20 5.72
L 19.81 20.32
L1 4.50
0.205 0.225
.780 .800
.177
I S
I SM
V SD
t rr
V GS = 0 V
Pulse width limited by T JM
I F = 25 A, V GS = 0 V, Note 1
I F = 25 A, -di/dt = 100 A/ μ s
70
182
490
1.0
A
A
V
ns
? P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
TO-3P (IXTQ) Outline
.140 .144
0.232 0.252
.170 .216
242 BSC
V R = 25 V, V GS = 0 V
Notes: 1. Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %;
2. On through-hole packages, R DS(on) Kelvin test contact
location must be 5 mm or less from the package body.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
Pins:
1 - Gate
3 - Source
2 - Drain
4, TAB - Drain
IXYS MOSFETs and IGBTs are covered by 4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
7,005,734 B2
one or moreof the following U.S. patents:
4,850,072
4,881,106
5,017,508
5,034,796
5,063,307
5,187,117
5,381,025
5,486,715
6,259,123 B1
6,306,728 B1
6,534,343
6,583,505
6,710,405B2
6,710,463
6,759,692
6771478 B2
7,063,975 B2
7,071,537
相关PDF资料 |
PDF描述 |
|---|---|
| IXTH200N085T | MOSFET N-CH 85V 200A TO-247 |
| IXTH200N10T | MOSFET N-CH 100V 200A TO-247 |
| IXTH20N60 | MOSFET N-CH 600V 20A TO-247AD |
| IXTH220N055T | MOSFET N-CH 55V 220A TO-247 |
| IXTH220N075T | MOSFET N-CH 75V 220A TO-247 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IXTH18N65 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 18A I(D) | TO-218VAR |
| IXTH19N45 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 19A I(D) | TO-218VAR |
| IXTH19N50 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 19A I(D) | TO-218VAR |
| IXTH19P15 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 19A I(D) | TO-218VAR |
| IXTH19P20 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 19A I(D) | TO-218VAR |
发布紧急采购，3分钟左右您将得到回复。