参数资料
型号: IXTH6N90A
厂商: IXYS
文件页数: 1/4页
文件大小: 0K
描述: MOSFET N-CH 900V 6A TO-247
标准包装: 30
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 900V
电流 - 连续漏极(Id) @ 25° C: 6A
开态Rds(最大)@ Id, Vgs @ 25° C: 1.4 欧姆 @ 3A,10V
Id 时的 Vgs(th)(最大): 4.5V @ 250µA
闸电荷(Qg) @ Vgs: 130nC @ 10V
输入电容 (Ciss) @ Vds: 2600pF @ 25V
功率 - 最大: 180W
安装类型: 通孔
封装/外壳: TO-247-3
供应商设备封装: TO-247AD
包装: 管件
Standard
V DSS
I D25
R DS(on)
Power MOSFET
IXTH / IXTM 6N90
IXTH / IXTM 6N90A
900 V
900 V
6A
6A
1.8 ?
1.4 ?
N-Channel Enhancement Mode
Symbol
Test Conditions
Maximum Ratings
TO-247 AD (IXTH)
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
900
900
V
V
V GS
V GSM
I D25
I DM
P D
T J
T JM
T stg
Continuous
Transient
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
± 20
± 30
6
24
180
-55 ... +150
150
-55 ... +150
V
V
A
A
W
° C
° C
° C
TO-204 AA (IXTM)
G
D (TAB)
M d
Weight
Mounting torque
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Maximum lead temperature for soldering
300
° C
1.6 mm (0.062 in.) from case for 10 s
Features
International standard packages
Low R DS (on) HDMOS TM process
Rugged polysilicon gate cell structure
Low package inductance (< 5 nH)
- easy to drive and to protect
Fast switching times
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
Applications
Switch-mode and resonant-mode
V DSS
V GS(th)
I GSS
I DSS
V GS = 0 V, I D = 3 mA
V DS = V GS , I D = 250 μ A
V GS = ± 20 V DC , V DS = 0
V DS = 0.8 ? V DSS
V GS = 0 V
T J = 25 ° C
T J = 125 ° C
900
2
4.5
± 100
250
1
V
V
nA
μ A
mA
power supplies
Motor controls
Uninterruptible Power Supplies (UPS)
DC choppers
Advantages
V GS = 10 V, I D = 0.5 I D25
R DS(on)
6N90
6N90A
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
1.8
1.4
?
?
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
? 2000 IXYS All rights reserved
91543E(5/96)
1-4
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