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参数资料
| 型号： | IXTK200N10L2 |
| 厂商： | IXYS |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET 100V 200A TO-264 |
| 标准包装： | 25 |
| 系列： | * |
| 其它名称： | Q7017004 |
Advance Technical Information
Linear L2 TM Power
MOSFET w/ Extended
FBSOA
IXTK200N10L2
IXTX200N10L2
V DSS
I D25
R DS(on)
= 100V
= 200A
< 11m Ω
N-Channel Enhancement Mode
Guaranteed FBSOA
Avalanche Rated
TO-264 (IXTK)
Symbol
Test Conditions
Maximum Ratings
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C, R GS = 1M Ω
100
100
V
V
G
D
S
Tab
V GSS
Continuous
± 20
V
V GSM
I D25
I LRMS
I DM
Transient
T C = 25 ° C (Chip Capability)
Lead Current Limit, (RMS)
T C = 25 ° C, Pulse Width Limited by T JM
± 30
200
160
500
V
A
A
A
PLUS247(IXTX)
I A
E AS
P D
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
100
5
1040
A
J
W
G
D
S
Tab
T J
T JM
T stg
T L
1.6mm (0.063 in.) from Case for 10s
-55...+150
150
-55...+150
300
° C
° C
° C
° C
G = Gate
S = Source
D = Drain
Tab = Drain
T SOLD
M d
F C
Weight
Plastic Body for 10s
Mounting Torque (IXTK)
Mounting Force (IXTX)
TO-264
PLUS247
260
1.13/10
20..120 / 4.5..27
10
6
° C
Nm/lb.in.
N/lb.
g
g
Features
Designed for Linear Operation
Avalanche Rated
Guaranteed FBSOA at 75 ° C
Advantages
Easy to Mount
Space Savings
High Power Density
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
BV DSS V GS = 0V, I D = 1mA
Characteristic Values
Min. Typ. Max.
100
V
Applications
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 3mA
V GS = ± 20V, V DS = 0V
V DS = V DSS , V GS = 0V
T J = 125 ° C
2.0
4.5
± 200
10
250
V
nA
μ A
μ A
Solid State Circuit Breakers
Soft Start Controls
Linear Amplifiers
Programmable Loads
Current Regulators
R DS(on)
V GS = 10V, I D = 0.5 ? I D25 , Note 1
11 m Ω
? 2010 IXYS CORPORATION, All Rights Reserved
DS100239(2/10)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IXTK200N10P | 功能描述:MOSFET 200 Amps 100V 0.0075 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXTK20N140 | 功能描述:MOSFET High Voltage Power MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXTK20N150 | 功能描述:MOSFET 1200V High Voltage Power MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXTK210P10T | 功能描述:MOSFET TrenchP Power MOSFETs RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXTK21N100 | 功能描述:MOSFET 21 Amps 100V 0.55 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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