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| 型号： | IXTK46N50L |
| 厂商： | IXYS |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 500V 46A TO-264 |
| 产品目录绘图： | TO-264(AA) Package |
| 标准包装： | 25 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 500V |
| 电流 - 连续漏极(Id) @ 25° C： | 46A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 160 毫欧 @ 500mA，20V |
| Id 时的 Vgs(th)（最大）： | 6V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 260nC @ 15V |
| 输入电容 (Ciss) @ Vds： | 7000pF @ 25V |
| 功率 - 最大： | 700W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-264-3，TO-264AA |
| 供应商设备封装： | TO-264 |
| 包装： | 管件 |
IXTK46N50L
IXTX46N50L
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
TO-264 (IXTK) Outline
Min. Typ. Max.
g fs
V DS = 10 V; I D = 0.5 ? I D25 , Note 1
7
10
13
S
C iss
7000
pF
C oss
C rss
t d(on)
t r
V GS = 0 V, V DS = 25 V, f = 1 MHz
V GS = 15 V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
900
170
40
50
pF
pF
ns
ns
t d(off)
t f
Q g(on)
R G
= 2 Ω (External),
80
42
260
ns
ns
nC
Q gs
Q gd
R thJC
R thCS
V GS = 15 V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
85
125
0.15
nC
nC
0.18 ° C/W
° C/W
Safe Operating Area Specification
Symbol
SOA
Test Conditions
V DS = 400 V, I D = 0.6 A, T C = 90°C
Min.
240
Typ.
Max.
W
Source-Drain Diode
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
PLUS247 TM (IXTX) Outline
Symbol
Test Conditions
Min. Typ. Max.
I S
I SM
V SD
t rr
V GS = 0 V
Repetitive; pulse width limited by T JM
I F = I S , V GS = 0 V, Note 1
I F = I S , -di/dt = 100 A/ μ s, V R = 100V
600
46
100
1.5
A
A
V
ns
Note 1: Pulse test, t < 300 μ s, duty cycle, d ≤ 2 %
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim.
A
A 1
A 2
b
b 1
Millimeter
Min. Max.
4.83 5.21
2.29 2.54
1.91 2.16
1.14 1.40
1.91 2.13
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from data gathered during objective characterizations of preliminary engineering lots; but
also may yet contain some information supplied during a pre-production design evaluation. IXYS
reserves the right to change limits, test conditions, and dimensions without notice.
b 2
C
D
E
e
L
L1
Q
R
2.92 3.12
0.61 0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81 4.32
5.59 6.20
4.32 4.83
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or moreof the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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