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参数资料
| 型号： | IXTK600N04T2 |
| 厂商： | IXYS |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40V 600A TO-264 |
| 标准包装： | 25 |
| 系列： | TrenchT2™ GigaMOS™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 600A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.5 毫欧 @ 100A，10V |
| Id 时的 Vgs(th)（最大）： | 3.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 590nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 40000pF @ 25V |
| 功率 - 最大： | 1250W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-264-3，TO-264AA |
| 供应商设备封装： | TO-264 |
| 包装： | 管件 |
IXTK600N04T2
IXTX600N04T2
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
TO-264 (IXTK) Outline
g fs
C iss
C oss
C rss
R GI
V DS = 10V, I D = 60A, Note 1
V GS = 0V, V DS = 25V, f = 1MHz
Gate Input Resistance
90
150
40
6400
1470
1.32
S
nF
pF
pF
?
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
R thJC
R thCS
Resistive Switching Times
V GS = 10V, V DS = 0.5 ? V DSS , I D = 200A
R G = 1 ? (External)
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I DSS
40
20
90
250
590
127
163
0.15
ns
ns
ns
ns
nC
nC
nC
0.12 ° C/W
° C/W
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
Millimeter
Min. Max.
4.82 5.13
2.54 2.89
2.00 2.10
1.12 1.42
2.39 2.69
2.90 3.09
0.53 0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00 0.25
0.00 0.25
Inches
Min. Max.
.190 .202
.100 .114
.079 .083
.044 .056
.094 .106
.114 .122
.021 .033
1.020 1.030
.780 .786
.215 BSC
.000 .010
.000 .010
L
L1
P
20.32 20.83
2.29 2.59
3.17 3.66
.800 .820
.090 .102
.125 .144
Source-Drain Diode
Q
Q1
R
6.07 6.27
8.38 8.69
3.81 4.32
.239 .247
.330 .342
.150 .170
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
R1
S
T
1.78 2.29
6.04 6.30
1.57 1.83
.070 .090
.238 .248
.062 .072
I S
I SM
V SD
t rr
I RM
Q RM
V GS = 0V
Repetitive, Pulse Width Limited by T JM
I F = 100A, V GS = 0V, Note 1
I F = 150A, V GS = 0V
-di/dt = 100A/ μ s
V R = 20V
100
3.3
165
600
1800
1.2
A
A
V
ns
A
nC
PLUS 247 TM (IXTX) Outline
Notes 1. Pulse test, t ≤ 300 μ s, duty cycle, d ≤ 2%.
2. Includes lead resistance.
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim.
A
Millimeter
Min. Max.
4.83 5.21
Inches
Min. Max.
.190 .205
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
A 1
A 2
b
b 1
b 2
C
D
E
e
L
L1
Q
R
2.29 2.54
1.91 2.16
1.14 1.40
1.91 2.13
2.92 3.12
0.61 0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81 4.32
5.59 6.20
4.32 4.83
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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相关代理商/技术参数 |
参数描述 |
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| IXTK60N50L2 | 功能描述:MOSFET 60 Amps 500V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXTK62N25 | 功能描述:MOSFET 62 Amps 250V 0.035 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXTK74N20 | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:High Current MegaMOSFET |
| IXTK75N30 | 功能描述:MOSFET 75 Amps 300V 0.042 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXTK80N25 | 功能描述:MOSFET 80 Amps 250V 0.033 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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