- 您现在的位置：买卖IC网 > Datasheet目录463 > IXTL2X200N085T (IXYS)MOSFET N-CH 85V ISOPLUS I5-PAK Datasheet资料下载
参数资料
| 型号： | IXTL2X200N085T |
| 厂商： | IXYS |
| 文件页数： | 2/2页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 85V ISOPLUS I5-PAK |
| 标准包装： | 25 |
| 系列： | TrenchMV™ |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 85V |
| 电流 - 连续漏极(Id) @ 25° C： | 112A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 6 毫欧 @ 50A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 152nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 7600pF @ 25V |
| 功率 - 最大： | 150W |
| 安装类型： | 通孔 |
| 封装/外壳： | ISOPLUSi5-Pak? |
| 供应商设备封装： | ISOPLUSi5-Pak? |
| 包装： | 管件 |
IXTL2x200N085T
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C unless otherwise specified)
ISOPLUS i5-Pak TM (IXTL) Outline
Min. Typ. Max.
g fs
R G
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
V DS = 10 V; I D = 60 A, Note 1
V GS = 0 V, V DS = 25 V, f = 1 MHz
V GS = 10 V, V DS = 0.5 V DSS , I D = 25 A
R G = 5 Ω (External)
75
125
3
7600
1040
200
32
80
65
64
152
S
Ω
pF
pF
pF
ns
ns
ns
ns
nC
Q gs
Q gd
V GS = 10 V, V DS = 0.5 V DSS , I D = 25 A
37
42
nC
nC
Leads:
1, 5: Drain
2, 4: Source
R thJC
R thCS
0.50
1.0
° C/W
° C/W
3: Gate
6. Isolated
Source-Drain Diode
Characteristic Values
T J = 25 ° C unless otherwise specified)
Symbol
Test Conditions
Min. Typ. Max.
I S
I SM
V SD
t rr
V GS = 0 V
Pulse width limited by T JM
I F = 50 A, V GS = 0 V, Note 1
I F = 25 A, -di/dt = 100 A/ μ s
55
200
540
1.0
A
A
V
ns
V R = 40 V, V GS = 0 V
Notes: 1. Pulse test: t ≤ 300 μ s, duty cycle d ≤ 2 %;
2. Drain and Source Kelvin contacts must be located less than 5 mm
from the plastic body.
ADVANCETECHNICALINFORMATION
The product presented herein is under development. The Technical Specifications offered
are derived from a subjective evaluation of the design, based upon prior knowledge and
experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves
the right to change limits, test conditions, and dimensions without notice.
Note:
1. TAB 6 - Electrically isolated from the
other pins.
2. All leads and tab are tin plated.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
7,005,734 B2
one or moreof the following U.S. patents:
4,850,072
4,881,106
5,017,508
5,034,796
5,063,307
5,187,117
5,381,025
5,486,715
6,259,123 B1
6,306,728 B1
6,534,343
6,583,505
6,710,405B2
6,710,463
6,759,692
6771478 B2
7,063,975 B2
7,071,537
相关PDF资料 |
PDF描述 |
|---|---|
| IXTL2X220N075T | MOSFET N-CH 75V ISOPLUS I5-PAK |
| IXTL2X240N055T | MOSFET N-CH 55V 140A ISOPLUS I5 |
| IXTN110N20L2 | MOSFET N-CH 200V 100A SOT-227 |
| IXTN17N120L | MOSFET N-CH 1200V 15A SOT-227B |
| IXTN200N10T | MOSFET N-CH 100V 200A SOT-227 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IXTL2x220N075T | 功能描述:MOSFET 220 Amps 75V 3.4 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXTL2x240N055T | 功能描述:MOSFET 240 Amps 55V 3.3 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXTL350 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 14A I(D) | TO-254 |
| IXTL450 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 12A I(D) | TO-254 |
| IXTL4P50 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 500V V(BR)DSS | 4A I(D) | TO-254 |
发布紧急采购，3分钟左右您将得到回复。