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参数资料
| 型号： | IXTN110N20L2 |
| 厂商： | IXYS |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 200V 100A SOT-227 |
| 标准包装： | 1 |
| 系列： | Linear L2™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 200V |
| 电流 - 连续漏极(Id) @ 25° C： | 100A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 24 毫欧 @ 55A，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 3mA |
| 闸电荷(Qg) @ Vgs： | 500nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 23000pF @ 25V |
| 功率 - 最大： | 735W |
| 安装类型： | 底座安装 |
| 封装/外壳： | SOT-227-4，miniBLOC |
| 供应商设备封装： | SOT-227B |
| 包装： | 管件 |
Advance Technical Information
Linear L2 TM Power
MOSFET w/Extended
FBSOA
IXTN110N20L2
V DSS
I D25
R DS(on)
= 200V
= 100A
≤ 24m Ω
N-Channel Enhancement Mode
Guaranteed FBSOA
Avalanche Rated
miniBLOC, SOT-227
E153432
Symbol
V DSS
V DGR
Test Conditions
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C, R GS = 1M Ω
Maximum Ratings
200
200
V
V
G
S
V GSS
V GSM
I D25
Continuous
Transient
T C = 25 ° C
± 20
± 30
100
V
V
A
D
S
I DM
I A
E AS
P D
T J
T JM
T stg
T L
T SOLD
V ISOL
M d
Weight
T C = 25 ° C, Pulse Width Limited by T JM
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, RMS t = 1 Minute
I ISOL ≤ 1mA t = 1 Second
Mounting Torque
Terminal Connection Torque
275
55
5
735
-55 ... +150
150
-55 ... +150
300
260
2500
3000
1.5/13
1.3/11.5
30
A
A
J
W
° C
° C
° C
° C
° C
V~
V~
Nm/lb.in.
Nm/lb.in.
g
G = Gate D = Drain
S = Source
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
(Gate Return) Terminal.
Features
? Designed for Linear Operation
? International Standard Package
Guaranteed FBSOA at 75°C
? Avalanche Rated
? Molding Epoxy Meets UL94 V-0
Flammability Classification
? MiniBLOC with Aluminium Nitride
Isolation
Applications
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
BV DSS V GS = 0V, I D = 1mA
Characteristic Values
Min. Typ. Max.
200
V
?
?
?
?
?
?
Programmable Loads
Current Regulators
DC-DC Converters
Battery Chargers
DC Choppers
Temperature and Lighting Controls
V GS(th)
I GSS
I DSS
R DS(on)
V DS = V GS , I D = 3mA
V GS = ± 20V, V DS = 0V
V DS = V DSS , V GS = 0V
T J = 125 ° C
V GS = 10V, I D = 55A, Note 1
2.0
4.5 V
± 200 nA
50 μ A
2.5 mA
24 m Ω
Advantages
? Easy to Mount
? Space Savings
? High Power Density
? 2009 IXYS CORPORATION, All Rights Reserved
DS100196(9/09)
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