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| 型号： | IXTN110N20L2 |
| 厂商： | IXYS |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 200V 100A SOT-227 |
| 标准包装： | 1 |
| 系列： | Linear L2™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 200V |
| 电流 - 连续漏极(Id) @ 25° C： | 100A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 24 毫欧 @ 55A，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 3mA |
| 闸电荷(Qg) @ Vgs： | 500nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 23000pF @ 25V |
| 功率 - 最大： | 735W |
| 安装类型： | 底座安装 |
| 封装/外壳： | SOT-227-4，miniBLOC |
| 供应商设备封装： | SOT-227B |
| 包装： | 管件 |
IXTN110N20L2
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
SOT-227B (IXTN) Outline
g fs
V DS = 10V, I D = 55A, Note 1
55
75
95
S
C iss
23
nF
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
V GS = 0V, V DS = 25V, f = 1MHz
Resistive Switching Times
V GS = 10V, V DS = 0.5 ? V DSS , I D = 55A
R G = 1 Ω (External)
2160
320
40
100
33
135
500
pF
pF
ns
ns
ns
ns
nC
Q gs
Q gd
V GS = 10V, V DS = 0.5 ? V DSS , I D = 55A
110
182
nC
nC
(M4 screws (4x) supplied)
R thJC
0.17 ° C/W
R thCS
Safe-Operating-Area Specification
0.05
° C/W
Symbol
Test Conditions
Characteristic Values
Min. Typ. Max.
SOA
V DS = 200V, I D = 1.75A, T C = 75 ° C , Tp = 3s
350
W
Source-Drain Diode
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
I S
I SM
V SD
t rr
I RM
Q RM
Note
V GS = 0V
Repetitive, Pulse Width Limited by T JM
I F = 55A, V GS = 0V, Note 1
I F = 55A, -di/dt = 100A/ μ s,
V R = 100V, V GS = 0V
1. Pulse Test, t ≤ 300 μ s; Duty Cycle, d ≤ 2%.
420
39
8.3
110
440
1.35
A
A
V
ns
A
μ C
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2
6,759,692
7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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