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| 型号： | IXTN60N50L2 |
| 厂商： | IXYS |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 53A 500V SOT-227 |
| 产品目录绘图： | SOT-227, SOT-227B miniBLOC |
| 标准包装： | 10 |
| 系列： | Linear L2™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 500V |
| 电流 - 连续漏极(Id) @ 25° C： | 53A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 100 毫欧 @ 30A，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 610nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 24000pF @ 25V |
| 功率 - 最大： | 735W |
| 安装类型： | 底座安装 |
| 封装/外壳： | SOT-227-4，miniBLOC |
| 供应商设备封装： | SOT-227B |
| 包装： | 管件 |
IXTN60N50L2
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
SOT-227B (IXTN) Outline
g fs
V DS = 10V, I D = 30A, Note 1
18
25
32
S
C iss
24
nF
C oss
C rss
t d(on)
t r
t d(off)
t f
V GS = 0V, V DS = 25V, f = 1MHz
Resistive Switching Times
V GS = 15V, V DS = 0.5 ? V DSS , I D = 30A
R G = 0.5 Ω (External)
1325
172
40
40
165
38
pF
pF
ns
ns
ns
ns
Q g(on)
610
nC
(M4 screws (4x) supplied)
Q gs
Q gd
R thJC
R thCS
V GS = 10V, V DS = 0.5 ? V DSS , I D = 30A
130
365
0.05
nC
nC
0.17 ° C/W
° C/W
Safe Operating Area Specification
Symbol
SOA
Test Conditions
V DS = 400V, I D = 0.9A, T C = 75°C, tp = 3s
Min.
360
Typ.
Max.
W
Source-Drain Diode
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
I S
I SM
V SD
t rr
I RM
Q RM
V GS = 0V
Repetitive, pulse width limited by T JM
I F = I S , V GS = 0V, Note 1
I F = 60A, -di/dt = 100A/ μ s
V R = 100V, V GS = 0V
980
73
35.8
60
240
1.5
A
A
V
ns
A
μ C
Note 1: Pulse test, t ≤ 300 μ s; duty cycle, d ≤ 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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