- 您现在的位置：买卖IC网 > Datasheet目录465 > IXTU12N06T (IXYS)MOSFET N-CH 60V 12A TO-251 Datasheet资料下载
参数资料
| 型号： | IXTU12N06T |
| 厂商： | IXYS |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 12A TO-251 |
| 产品目录绘图： | TO-220, TO-251 |
| 标准包装： | 75 |
| 系列： | TrenchMV™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 12A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 85 毫欧 @ 6A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 25µA |
| 闸电荷(Qg) @ Vgs： | 3.4nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 256pF @ 25V |
| 功率 - 最大： | 33W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-251-3 长引线，IPak，TO-251AB |
| 供应商设备封装： | TO-251 |
| 包装： | 管件 |
IXTU12N06T
IXTY12N06T
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
TO-251 (IXTU) Outline
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
V DS = 10V, I D = 0.5 ? I D25 , Notes 1
V GS = 0V, V DS = 25V, f = 1MHz
Resistive Switching Times
V GS = 10V, V DS = 0.5 ? V DSS , I D = 6A
R G = 50 Ω (External)
2.9
4.7
256
46
10.4
12
29
29
18
3.4
S
pF
pF
pF
ns
ns
ns
ns
nC
Q gs
Q gd
V GS = 10V, V DS = 0.5 ? V DSS , I D = 6A
1.0
0.9
nC
nC
1. Gate
3. Source
2.Drain
4. Drain
R thJC
4.5 ° C/W
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
A
A1
b
2.19
0.89
0.64
2.38
1.14
0.89
.086
0.35
.025
.094
.045
.035
Source-Drain Diode
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
b1
b2
c
c1
D
0.76
5.21
0.46
0.46
5.97
1.14
5.46
0.58
0.58
6.22
.030
.205
.018
.018
.235
.045
.215
.023
.023
.245
I S
I SM
V GS = 0V
Repetitive, pulse width limited by T JM
12
48
A
A
E
e
e1
H
6.35
2.28
4.57
17.02
6.73
BSC
BSC
17.78
.250
.090
.180
.670
.265
BSC
BSC
.700
V SD
t rr
I RM
I F = 6A, V GS = 0V, Note 1
I F = 6A, V GS = 0V, -di/dt = 100A/ μ s
V R = 30V
30
1.34
1.2
V
ns
A
L 8.89 9.65
L1 1.91 2.28
L2 0.89 1.27
TO-252 (IXTY) Outline
.350
.075
.035
.380
.090
.050
Notes: 1. Pulse test: t ≤ 300 μ s; duty cycle, d ≤ 2%.
2. On through-hole packages, R DS(on) Kelvin test contact location must be
5mm or less from the package body.
Pins:
Dim.
1 - Gate
3 - Source
Millimeter
2,4 - Drain
Inches
Min. Max.
Min.
Max.
A
A1
A2
b
b1
2.19
0.89
0
0.64
0.76
2.38
1.14
0.13
0.89
1.14
0.086
0.035
0
0.025
0.030
0.094
0.045
0.005
0.035
0.045
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
b2
c
c1
D
D1
E
E1
5.21
0.46
0.46
5.97
4.32
6.35
4.32
5.46
0.58
0.58
6.22
5.21
6.73
5.21
0.205
0.018
0.018
0.235
0.170
0.250
0.170
0.215
0.023
0.023
0.245
0.205
0.265
0.205
e
e1
2.28 BSC
4.57 BSC
0.090 BSC
0.180 BSC
H
L
9.40 10.42
0.51 1.02
0.370
0.020
0.410
0.040
L1
L2
L3
0.64
0.89
2.54
1.02
1.27
2.92
0.025
0.035
0.100
0.040
0.050
0.115
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
相关PDF资料 |
PDF描述 |
|---|---|
| IXTU2N80P | MOSFET N-CH TO-251 |
| IXTV03N400S | MOSFET N-CH 4000V .3A PLUS 220 |
| IXTV110N25TS | MOSFET N-CH 250V 110A PLUS220SMD |
| IXTV18N60PS | MOSFET N-CH 600V 18A PLUS220-SMD |
| IXTV200N10T | MOSFET N-CH 100V 200A PLUS220 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IXTU1R4N60P | 功能描述:MOSFET 1.4 Amps 600V 9.0 Ohms Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXTU2N80P | 功能描述:MOSFET Polar MOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXTU44N10T | 功能描述:MOSFET 44 Amps 100V 25.0 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXTU50N085T | 功能描述:MOSFET 50 Amps 85V 20.0 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXTU55N075T | 功能描述:MOSFET 55 Amps 75V 17.0 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。