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参数资料
| 型号： | JAN1N5807CB |
| 厂商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分类： | 整流器 |
| 英文描述： | 3 A, SILICON, RECTIFIER DIODE |
| 封装： | HERMETIC SEALED, GLASS, E, 2 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 209K |
| 代理商： | JAN1N5807CB |
VOIDLESS-HERMETICALLY-SEALED
ULTRAFAST RECOVERY GLASS
RECTIFIERS
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright
2008
2-25-2008 REV A
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
1N5807CB thru 1N5811CB
1N5807CB–1N5811CB
DESCRIPTION
APPEARANCE
This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-19500/742 and
is ideal for high-reliability applications where a failure cannot be tolerated. These industry-
recognized 6.0 Amp rated rectifiers for working peak reverse voltages from 50 to 150 volts
are hermetically sealed with voidless-glass construction using an internal “Category III”
metallurgical bond.
These devices are also available in surface mount MELF package
configurations by adding a “US” suffix (see separate data sheet for 1N5807CBUS thru
1N5811CBUS). Microsemi also offers numerous other rectifier products to meet higher and
lower current ratings with various recovery time speed requirements including standard, fast
and ultrafast device types in both through-hole and surface mount packages.
“E” Package
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
Popular JEDEC registered 1N5807 to 1N5811 series
Voidless hermetically sealed glass package
Extremely robust construction
Triple-layer passivation
Internal “Category III” Metallurgical bonds
JAN, JANTX, & JANTXV available per MIL-PRF-19500/742
Further screening options are available for JANS in
accordance with MIL-PRF-19500/742 by using a “SP” prefix
Surface mount equivalents also available in a square end-
cap MELF configuration with “US” suffix (see separate data
sheet for 1N5807CBUS thru 1N5811CBUS)
Ultrafast recovery 6 Amp rectifier series 50 to 150 V
Military and other high-reliability applications
Switching power supplies or other applications
requiring extremely fast switching & low forward
loss
High forward surge current capability
Low thermal resistance
Controlled avalanche with peak reverse power
capability
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
Junction Temperature: -65oC to +175oC
Storage Temperature: -65oC to +175oC
Average Rectified Forward Current (I
O): 6 A @ TL = 75C
at 3/8 inch lead length (see note 1)
Thermal Resistance: 22 C/W junction to lead (L=.375 in)
Thermal Impedance: 1.5 C/W @ 10 ms heating time
Forward Surge Current (8.3 ms half sine) 125 Amps
Capacitance: 60 pF at 10 volts, f = 1 MHz
Solder temperature: 260C for 10 s (maximum)
CASE: Hermetically sealed voidless hard glass with
Tungsten slugs
TERMINATIONS: Axial-leads are Tin/Lead (Sn/Pb)
over Copper.
MARKING: Body painted and part number, etc.
POLARITY: Cathode indicated by band
Tape & Reel option: Standard per EIA-296
Weight: 750 mg
See package dimensions on last page
ELECTRICAL CHARACTERISTICS
TYPE
WORKING
PEAK
REVERSE
VOLTAGE
VRWM
BREAKDOWN
VOLTAGE
(MIN.)
@ 100
μA
VBR
AVERAGE
RECTIFIED
CURRENT
IO1
@TL=75C
(Note 1)
AVERAGE
RECTIFIED
CURRENT
IO2
@TA=55C
Note 2
MAXIMUM
FORWARD
VOLTAGE
@ 4 A
(8.3 ms pulse)
VF
REVERSE
CURRENT
(MAX)
@ VRWM
IR
SURGE
CURRENT
(MAX)
IFSM
(NOTE 3)
REVERSE
RECOVERY
TIME (MAX)
(NOTE 4)
trr
VOLTS
AMPS
VOLTS
μA
AMPS
ns
25
oC
100
oC
25
oC 125oC
1N5807CB
1N5809CB
1N5811CB
50
100
150
60
110
160
6.0
3.0
0.875
0.800
5
525
125
30
NOTE 1: Rated at TL = 75C at 3/8 inch lead length. Derate at 60 mA/C for TL above 75C.
NOTE 2: Derate linearly at 25 mA/C above TA = 55C. This rating is typical for PC boards where thermal resistance from mounting point to
ambient is sufficiently controlled where TJ(max) does not exceed 175C
NOTE 3: TA = 25
oC @ I
O = 3.0 A and VRWM for ten 8.3 ms surges at 1 minute intervals
NOTE 4: IF = 1.0 A, IRM = 1.0 A, IR(REC) = 0.10 A and di/dt = 100 A/s min
相关PDF资料 |
PDF描述 |
|---|---|
| JANTX1N5807CB | 3 A, SILICON, RECTIFIER DIODE |
| JANTXV1N5807CB | 3 A, SILICON, RECTIFIER DIODE |
| JAN1N5811CB | 3 A, SILICON, RECTIFIER DIODE |
| JAN1N5809CB | 3 A, SILICON, RECTIFIER DIODE |
| JANTX1N5809CB | 3 A, SILICON, RECTIFIER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| JAN1N5807CBUS | 制造商:Microsemi Corporation 功能描述:ULTRA FAST RECTIFIER (LESS THAN 100NS) LAW - Bulk |
| JAN1N5807URS | 功能描述:Diode Standard 50V 3A Surface Mount B, SQ-MELF 制造商:microsemi ire division 系列:军用，MIL-PRF-19500/477 包装:散装 零件状态:在售 二极管类型:标准 电压 - DC 反向（Vr）（最大值）:50V 电流 - 平均整流（Io）:3A 不同 If 时的电压 - 正向（Vf）:875mV @ 4A 速度:快速恢复 = 200mA（Io） 反向恢复时间（trr）:30ns 不同?Vr 时的电流 - 反向漏电流:5μA @ 50V 不同?Vr，F 时的电容:60pF @ 10V，1MHz 安装类型:表面贴装 封装/外壳:SQ-MELF，B 供应商器件封装:B，SQ-MELF 工作温度 - 结:-65°C ~ 175°C 标准包装:1 |
| JAN1N5807US | 制造商:Microsemi Corporation 功能描述:ULTRA FAST RECTIFIER (LESS THAN 100NS) (UFR) - Bulk |
| JAN1N5809 | 制造商:Microsemi Corporation 功能描述:ULTRA FAST RECTIFIER (LESS THAN 100NS) (UFR) - Bulk |
| JAN1N5809URS | 功能描述:Diode Standard 100V 3A Surface Mount B, SQ-MELF 制造商:microsemi ire division 系列:军用，MIL-PRF-19500/477 包装:散装 零件状态:在售 二极管类型:标准 电压 - DC 反向（Vr）（最大值）:100V 电流 - 平均整流（Io）:3A 不同 If 时的电压 - 正向（Vf）:875mV @ 4A 速度:快速恢复 = 200mA（Io） 反向恢复时间（trr）:30ns 不同?Vr 时的电流 - 反向漏电流:5μA @ 100V 不同?Vr，F 时的电容:60pF @ 10V，1MHz 安装类型:表面贴装 封装/外壳:SQ-MELF，B 供应商器件封装:B，SQ-MELF 工作温度 - 结:-65°C ~ 175°C 标准包装:1 |
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