参数资料
型号: JDV2S10FS
元件分类: 变容二极管
英文描述: UHF BAND, 7.85 pF, SILICON, VARIABLE CAPACITANCE DIODE
封装: 1-1L1A, FSC, 2 PIN
文件页数: 1/2页
文件大小: 209K
代理商: JDV2S10FS
JDV2S10FS
2005-08-01
1
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S10FS
VCO for the UHF band
High capacitance ratio: C0.5V/C2.5V =2.55 (typ.)
Low series resistance: rs = 0.35 (typ.)
This device is suitable for use in a small-size tuner.
Maximum Ratings (Ta
= 25°C)
Characteristic
Symbol
Rating
Unit
Reverse voltage
VR
10
V
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
Electrical Characteristics (Ta
= 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
VR
IR = 1 A
10
V
Reverse current
IR
VR = 10 V
3
nA
C0.5V
VR = 0.5 V, f = 1 MHz
7.3
8.4
Capacitance
C2.5V
VR = 2.5 V, f = 1 MHz
2.75
3.4
pF
Capacitance ratio
C0.5V/C2.5V
2.4
2.55
Series resistance
rs
VR = 1 V, f = 470 MHz
0.35
0.5
Note: Signal level when capacitance is measured: Vsig = 500 mVrms
Marking
Unit: mm
JEDEC
JEITA
TOSHIBA
1-1L1A
Weight: 0.0006 g (typ.)
F
0.
0
.05
0.2
1.
0
±
0
.05
0.1±0.05
0.6±0.05
0.
1
0.
1
A
0.48+0.02
-0.03
±0.05
A
M
0.07
fSC
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