- 您现在的位置：买卖IC网 > PDF目录299245 > K4S281632D-TP7C 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 PDF资料下载
参数资料
| 型号： | K4S281632D-TP7C |
| 元件分类： | DRAM |
| 英文描述： | 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 |
| 封装： | 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 |
| 文件页数： | 6/9页 |
| 文件大小： | 80K |
| 代理商： | K4S281632D-TP7C |
CMOS SDRAM
K4S281632D
Rev. 0.1 Sept. 2001
DC CHARACTERISTICS
Notes :
(Recommended operating condition unless otherwise noted, TA =-40 to 85
°C)
Parameter
Symbol
Test Condition
Version
Unit Note
-55
-60
-7C
-75
-1H
-1L
Operating current
(One bank active)
ICC1
Burst length = 1
tRC
≥ tRC(min)
IO = 0 mA
130
110
100
100 100
mA
1
Precharge standby cur-
rent in power-down mode
ICC2P
CKE
≤ VIL(max), tCC = 10ns
2
mA
ICC2PS
CKE & CLK
≤ VIL(max), tCC = ∞
2
Precharge standby cur-
rent in non power-down
mode
ICC2N
CKE
≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
20
mA
ICC2NS
CKE
≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
10
Active standby current in
power-down mode
ICC3P
CKE
≤ VIL(max), tCC = 10ns
5
mA
ICC3PS
CKE & CLK
≤ VIL(max), tCC = ∞
5
Active standby current in
non power-down mode
(One bank active)
ICC3N
CKE
≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
30
mA
ICC3NS
CKE
≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
25
mA
Operating current
(Burst mode)
ICC4
IO = 0 mA
Page burst
4Banks Activated
tCCD = 2CLKs
150
140
130 130
mA
1
Refresh current
ICC5
tRC
≥ tRC(min)
220
200
190 190
mA
2
Self refresh current
ICC6
CKE
≤ 0.2V
I
2
mA
3
P
800
uA
4
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S281632D-TI**
4. K4S281632D-TP**
5. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ)
相关PDF资料 |
PDF描述 |
|---|---|
| K50-3C0E35.3280MR | CRYSTAL OSCILLATOR, CLOCK, 35.328 MHz, CMOS OUTPUT |
| K50-3C1E27.0000MR | CRYSTAL OSCILLATOR, CLOCK, 27 MHz, CMOS OUTPUT |
| K50-3C1E53.125MR | CRYSTAL OSCILLATOR, CLOCK, 53.125 MHz, CMOS OUTPUT |
| K50-3C0E32MR | CRYSTAL OSCILLATOR, CLOCK, 32 MHz, CMOS OUTPUT |
| K50-3C1SE24MR | CRYSTAL OSCILLATOR, CLOCK, 24 MHz, CMOS OUTPUT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| K4S281632E-TC60 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:128Mb E-die SDRAM Specification |
| K4S281632ETC75 | 制造商:Samsung Semiconductor 功能描述: |
| K4S281632E-TC75 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:128Mb E-die SDRAM Specification |
| K4S281632ETC75000 FAB | 制造商:Custownprod 功能描述: |
| K4S281632E-TL60 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:128Mb E-die SDRAM Specification |
发布紧急采购，3分钟左右您将得到回复。