参数资料
型号: K6F2008V2E-YF70
元件分类: SRAM
英文描述: 256K X 8 STANDARD SRAM, 70 ns, PDSO32
封装: 8 X 13.40 MM, TSOP1-32
文件页数: 1/9页
文件大小: 130K
代理商: K6F2008V2E-YF70
Revision 1.0
K6F2008V2E Family
1
September 2001
CMOS SRAM
Document Title
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
Revision No.
0.0
1.0
Remark
Preliminary
Final
History
Initial draft
Finalize
Draft Date
July 19 , 2001
September 27, 2001
相关PDF资料
PDF描述
K6L0908V2A-TD850 64K X 8 STANDARD SRAM, 85 ns, PDSO32
K7A163280A-QI16 512K X 32 CACHE SRAM, 3.5 ns, PQFP100
K7A403601A-QC140 128K X 36 CACHE SRAM, 4 ns, PQFP100
K85X-AA-15P-K30 15 CONTACT(S), MALE, D SUBMINIATURE CONNECTOR, SOLDER, PLUG
K85X-AA-15P-KJ15 15 CONTACT(S), MALE, D SUBMINIATURE CONNECTOR, SOLDER, PLUG
相关代理商/技术参数
参数描述
K6F2016R4G 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:2Mb(128K x 16 bit) Low Power SRAM
K6F2016R4G-F 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:2Mb(128K x 16 bit) Low Power SRAM
K6F2016R4G-FF70 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:2Mb(128K x 16 bit) Low Power SRAM
K6F2016R4G-FF85 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:2Mb(128K x 16 bit) Low Power SRAM
K6F2016R4G-XF70 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:2Mb(128K x 16 bit) Low Power SRAM