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参数资料
| 型号： | K6F2008V2E-YF70 |
| 元件分类： | SRAM |
| 英文描述： | 256K X 8 STANDARD SRAM, 70 ns, PDSO32 |
| 封装： | 8 X 13.40 MM, TSOP1-32 |
| 文件页数： | 8/9页 |
| 文件大小： | 130K |
| 代理商： | K6F2008V2E-YF70 |
Revision 1.0
K6F2008V2E Family
8
September 2001
CMOS SRAM
DATA RETENTION WAVE FORM
CS1 controlled
VCC
3.0V
2.2V
VDR
CS1
GND
Data Retention Mode
CS1
≥VCC - 0.2V
tSDR
tRDR
TIMING WAVEFORM OF WRITE CYCLE(3) (CS2 Controlled)
Address
CS1
tAW
NOTES (WRITE CYCLE)
1. A write occurs during the overlap of a low CS1, a high CS2 and a low WE. A write begins at the latest transition among CS1 goes low,
CS2 going high and WE going low : A write end at the earliest transition among CS1 going high, CS2 going low and WE going high,
tWP is measured from the begining of write to the end of write.
2. tCW is measured from the CS1 going low or CS2 going high to the end of write.
3. tAS is measured from the address valid to the beginning of write.
4. tWR is measured from the end of write to the address change. tWR(1) applied in case a write ends as CS1 or WE going high tWR(2)
applied in case a write ends as CS2 going to low.
CS2
tWP(2)
WE
Data in
Data Valid
Data out
High-Z
tCW(2)
tWR(4)
tWP(1)
tDW
tDH
tAS(3)
tWC
CS2 controlled
VCC
3.0V
0.4V
VDR
CS2
GND
Data Retention Mode
tSDR
tRDR
CS2
≤0.2V
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