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参数资料
| 型号： | K6R1004C1C-I15 |
| 厂商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| 中文描述： | 256Kx4位（与OE）的高速CMOS静态RAM（5.0V操作）。 |
| 文件页数： | 2/9页 |
| 文件大小： | 137K |
| 代理商： | K6R1004C1C-I15 |
PRELIMINARY
Revision 2.0
- 2 -
April 2000
CCPCCCRCELIMINARY
Preliminary
PRELIMINARY
K6R1004C1C-C/C-L, K6R1004C1C-I/C-P
CMOS SRAM
256K x 4 Bit (with OE) High-Speed CMOS Static RAM
GENERAL DESCRIPTION
FEATURES
Fast Access Time 10,12,15,20ns(Max.)
Low Power Dissipation
Standby (TTL)
: 30mA(Max.)
(CMOS) : 5mA(Max.)
0.5mA(Max.) L-Ver. only
Operating K6R1004C1C-10 : 75mA(Max.)
K6R1004C1C-12 : 70mA(Max.)
K6R1004C1C-15 : 68mA(Max.)
K6R1004C1C-20 : 65mA(Max.)
Single 5.0V
±10% Power Supply
TTL Compatible Inputs and Outputs
I/O Compatible with 3.3V Device
Fully Static Operation
- No Clock or Refresh required
Three State Outputs
2V Minimum Data Retention; L-ver. only
Center Power/Ground Pin Configuration
Standard Pin Configuration :
The K6R1004C1C is a 1,048,576-bit high-speed Static Ran-
dom Access Memory organized as 262,144 words by 4 bits.
The K6R1004C1C uses 4 common input and output lines and
has an output enable pin which operates faster than address
access time at read cycle. The device is fabricated using SAM-
SUNG
′s advanced CMOS process and designed for high-
speed circuit technology. It is particularly well suited for use in
high-density
high-speed
system
applications.
The
K6R1004C1C is packaged in a 400 mil 32-pin plastic SOJ.
PIN FUNCTION
Pin Name
Pin Function
A0 - A17
Address Inputs
WE
Write Enable
CS
Chip Select
OE
Output Enable
I/O1 ~ I/O4
Data Inputs/Outputs
VCC
Power(+5.0V)
VSS
Ground
N.C
No Connection
PIN CONFIGURATION(Top View)
Clk Gen.
I/O1 ~ I/O4
CS
WE
OE
FUNCTIONAL BLOCK DIAGRAM
R
o
w
S
e
le
c
t
Data
Cont.
Column Select
CLK
Gen.
Pre-Charge Circuit
Memory Array
512 Rows
512x4 Columns
I/O Circuit &
SOJ
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A17
A16
A15
A14
A13
OE
I/O4
Vss
Vcc
I/O3
A12
A11
A10
A9
A8
N.C
A0
A1
A2
A3
CS
I/O1
Vcc
Vss
I/O2
WE
A4
A5
A6
A7
N.C
A10 A11 A12 A13 A14 A15
A0
A1
A2
A3
A4
A5
A6
A7
A9
A16 A17
A8
K6R1004C1C-C10/C12/C15/C20
Commercial Temp.
K6R1004C1C-I10/I12/I15/I20
Industrial Temp.
ORDERING INFORMATION
相关PDF资料 |
PDF描述 |
|---|---|
| K6R1004C1C-I20 | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1004C1C-L | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1004C1C-P | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1004C1D-JC10 | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| K6R1004C1D-JI10 | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
相关代理商/技术参数 |
参数描述 |
|---|---|
| K6R1004C1C-I20 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1004C1C-L | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1004C1C-L10 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1004C1C-L12 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1004C1C-L15 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
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