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参数资料
| 型号： | K6R1004C1C-I15 |
| 厂商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| 中文描述： | 256Kx4位（与OE）的高速CMOS静态RAM（5.0V操作）。 |
| 文件页数： | 4/9页 |
| 文件大小： | 137K |
| 代理商： | K6R1004C1C-I15 |
PRELIMINARY
Revision 2.0
- 4 -
April 2000
CCPCCCRCELIMINARY
Preliminary
PRELIMINARY
K6R1004C1C-C/C-L, K6R1004C1C-I/C-P
CMOS SRAM
TEST CONDITIONS
Parameter
Value
Input Pulse Levels
0V to 3V
Input Rise and Fall Times
3ns
Input and Output timing Reference Levels
1.5V
Output Loads
See below
AC CHARACTERISTICS(TA=0 to 70
°C, VCC=5.0V±10%, unless otherwise noted.)
Output Loads(B)
DOUT
5pF*
480
255
for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ
+5.0V
* Including Scope and Jig Capacitance
Output Loads(A)
DOUT
RL = 50
ZO = 50
VL = 1.5V
30pF*
* Capacitive Load consists of all components of the
test environment.
READ CYCLE*
* The above parameters are also guaranteed at industrial temperature range.
Parameter
Sym-
bol
K6R1004C1C-10
K6R1004C1C-12
K6R1004C1C-15
K6R1004C1C-20
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Read Cycle Time
tRC
10
-
12
-
15
-
20
-
ns
Address Access Time
tAA
-
10
-
12
-
15
-
20
ns
Chip Select to Output
tCO
-
10
-
12
-
15
-
20
ns
Output Enable to Valid Output
tOE
-
5
-
6
-
7
-
9
ns
Chip Enable to Low-Z Output
tLZ
3
-
3
-
3
-
3
-
ns
Output Enable to Low-Z Output
tOLZ
0
-
0
-
0
-
0
-
ns
Chip Disable to High-Z Output
tHZ
0
5
0
6
0
7
0
9
ns
Output Disable to High-Z Output
tOHZ
0
5
0
6
0
7
0
9
ns
Output Hold from Address
tOH
3
-
3
-
3
-
3
-
ns
Chip Selection to Power Up Time
tPU
0
-
0
-
0
-
0
-
ns
Chip Selection to Power Down-
tPD
-
10
-
12
-
15
-
20
ns
相关PDF资料 |
PDF描述 |
|---|---|
| K6R1004C1C-I20 | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1004C1C-L | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1004C1C-P | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1004C1D-JC10 | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| K6R1004C1D-JI10 | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
相关代理商/技术参数 |
参数描述 |
|---|---|
| K6R1004C1C-I20 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1004C1C-L | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1004C1C-L10 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1004C1C-L12 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1004C1C-L15 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
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