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参数资料
| 型号： | K6R1004C1C-I15 |
| 厂商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| 中文描述： | 256Kx4位（与OE）的高速CMOS静态RAM（5.0V操作）。 |
| 文件页数： | 3/9页 |
| 文件大小： | 137K |
| 代理商： | K6R1004C1C-I15 |
PRELIMINARY
Revision 2.0
- 3 -
April 2000
CCPCCCRCELIMINARY
Preliminary
PRELIMINARY
K6R1004C1C-C/C-L, K6R1004C1C-I/C-P
CMOS SRAM
RECOMMENDED DC OPERATING CONDITIONS(TA=0 to 70
°C)
* VIL(Min) = -2.0V a.c (Pulse Width
≤ 8ns) for I ≤ 20mA.
** VIH(Max) = VCC + 2.0V a.c (Pulse Width
≤ 8ns) for I ≤ 20mA.
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
VCC
4.5
5.0
5.5
V
Ground
VSS
0
V
Input High Voltage
VIH
2.2
-
VCC+0.5**
V
Input Low Voltage
VIL
-0.5*
-
0.8
V
CAPACITANCE*(TA=25
°C, f=1.0MHz)
* Capacitance is sampled and not 100% tested.
Item
Symbol
Test Conditions
MIN
Max
Unit
Input/Output Capacitance
CI/O
VI/O=0V
-
8
pF
Input Capacitance
CIN
VIN=0V
-
6
pF
DC AND OPERATING CHARACTERISTICS(TA=0 to 70
°C, Vcc=5.0V±10%, unless otherwise specified)
* VCC=5.0V
±5%, Temp.=25°C.
Parameter
Symbol
Test Conditions
Min
Max
Unit
Input Leakage Current
ILI
VIN=VSS to VCC
-2
2
A
Output Leakage Current
ILO
CS=VIH or OE=VIH or WE=VIL
VOUT=VSS to VCC
-2
2
A
Operating Current
ICC
Min. Cycle, 100% Duty
CS=VIL, VIN=VIH or VIL,
IOUT=0mA
02ns
-
75
mA
12ns
-
70
15ns
-
68
20ns
-
65
Standby Current
ISB
Min. Cycle, CS=VIH
-
30
mA
ISB1
f=0MHz, CS
≥VCC-0.2V,
VIN
≥VCC-0.2V or VIN≤0.2V
Normal
-
5
L-Ver.
-
0.5
Output Low Voltage Level
VOL
IOL=8mA
-
0.4
V
Output High Voltage Level
VOH
IOH=-4mA
2.4
-
V
VOH1*
IOH1=-0.1mA
-
3.95
V
ABSOLUTE MAXIMUM RATINGS*
* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
Voltage on Any Pin Relative to VSS
VIN, VOUT
-0.5 to Vcc+0.5V
V
Voltage on VCC Supply Relative to VSS
VCC
-0.5 to 7.0
V
Power Dissipation
Pd
1
W
Storage Temperature
TSTG
-65 to 150
°C
Operating Temperature
Commercial
TA
0 to 70
°C
Industrial
TA
-40 to 85
°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| K6R1004C1C-I20 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1004C1C-L | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1004C1C-L10 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1004C1C-L12 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1004C1C-L15 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
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