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参数资料
| 型号： | K6R1004C1C-I15 |
| 厂商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| 中文描述： | 256Kx4位（与OE）的高速CMOS静态RAM（5.0V操作）。 |
| 文件页数： | 5/9页 |
| 文件大小： | 137K |
| 代理商： | K6R1004C1C-I15 |
PRELIMINARY
Revision 2.0
- 5 -
April 2000
CCPCCCRCELIMINARY
Preliminary
PRELIMINARY
K6R1004C1C-C/C-L, K6R1004C1C-I/C-P
CMOS SRAM
Address
Data Out
Previous Valid Data
Valid Data
TIMMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=VIL, WE=VIH)
tAA
tRC
tOH
TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)
CS
Address
OE
Data out
tAA
tOLZ
tLZ(4,5)
tOH
tOHZ
tRC
tOE
tCO
tPU
tPD
tHZ(3,4,5)
50%
VCC
Current
ICC
ISB
Valid Data
WRITE CYCLE*
* The above parameters are also guaranteed at industrial temperature range.
Parameter
Sym-
bol
K6R1004C1C-10
K6R1004C1C-12
K6R1004C1C-15
K6R1004C1C-20
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Write Cycle Time
tWC
10
-
12
-
15
-
20
-
ns
Chip Select to End of Write
tCW
7
-
8
-
9
-
10
-
ns
Address Set-up Time
tAS
0
-
0
-
0
-
0
-
ns
Address Valid to End of Write
tAW
7
-
8
-
9
-
10
-
ns
Write Pulse Width(OE High)
tWP
7
-
8
-
9
-
10
-
ns
Write Pulse Width(OE Low)
tWP1
10
-
12
-
15
-
20
-
ns
Write Recovery Time
tWR
0
-
0
-
0
-
0
-
ns
Write to Output High-Z
tWHZ
0
5
0
6
0
7
0
9
ns
Data to Write Time Overlap
tDW
5
-
6
-
7
-
8
-
ns
Data Hold from Write Time
tDH
0
-
0
-
0
-
0
-
ns
End Write to Output Low-Z
tOW
3
-
3
-
3
-
3
-
ns
相关PDF资料 |
PDF描述 |
|---|---|
| K6R1004C1C-I20 | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1004C1C-L | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1004C1C-P | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1004C1D-JC10 | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| K6R1004C1D-JI10 | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
相关代理商/技术参数 |
参数描述 |
|---|---|
| K6R1004C1C-I20 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1004C1C-L | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1004C1C-L10 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1004C1C-L12 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1004C1C-L15 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
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