- 您现在的位置：买卖IC网 > PDF目录224103 > K6T1008C2C (SAMSUNG SEMICONDUCTOR CO. LTD.) 128K x8 bit Low Power CMOS Static RAM PDF资料下载
参数资料
| 型号： | K6T1008C2C |
| 厂商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128K x8 bit Low Power CMOS Static RAM |
| 中文描述： | 128K的x8位低功耗CMOS静态RAM |
| 文件页数： | 3/10页 |
| 文件大小： | 189K |
| 代理商： | K6T1008C2C |
PRELIMINARY
K6T1008C2C Family
CMOS SRAM
Revision 2.0
November 1997
2
128K x8 bit Low Power CMOS Static RAM
GENERAL DESCRIPTION
The K6T1008C2C families are fabricated by SAMSUNG
′s
advanced CMOS process technology. The families support
various operating temperature ranges and have various
package types for user flexibility of system design. The fami-
lies also support low data retention voltage for battery back-
up operation with low data retention current.
FEATURES
Process Technology: TFT
Organization: 128K x8
Power Supply Voltage: 4.5~5.5V
Low Data Retention Voltage: 2V(Min)
Three state output and TTL Compatible
Package Type: 32-DIP-600, 32-SOP-525,
32-TSOP1-0820F/R
PIN DESCRIPTION
PRODUCT FAMILY
Product Family
Operating Temperature
Vcc Range
Speed
Power Dissipation
PKG Type
Standby
(ISB1, Max)
Operating
(ICC2, Max)
K6T1008C2C-L
Commercial(0~70
°C)
4.5~5.5V
55/70ns
50
A
10
A
60mA
32-DIP, 32-SOP
32-TSOP1-F/R
K6T1008C2C-B
K6T1008C2C-P
Industrial(-40~85
°C)
70ns
50
A
15
A
32-SOP
32-TSOP1-F/R
K6T1008C2C-F
FUNCTIONAL BLOCK DIAGRAM
32-TSOP
Type1 - Reverse
A11
A9
A8
A13
WE
CS2
A15
VCC
N.C
A16
A14
A12
A7
A6
A5
A4
OE
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
A3
32-TSOP
Type1 - Forward
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
N.C
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
VCC
A15
CS2
WE
A13
A8
A9
A11
OE
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
32-DIP
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32-SOP
A11
A9
A8
A13
WE
CS2
A15
VCC
N.C
A16
A14
A12
A7
A6
A5
A4
OE
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
A3
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
Precharge circuit.
Memory array
1024 rows
128
×8 columns
I/O Circuit
Column select
Clk gen.
Row
select
A0
A1
A2
A3
A9
A11
A10
A4
A5
A6
A7
A8
A12
A14
I/O1
Data
cont
I/O8
A13
A15
A16
VCC
VSS
CS1
WE
OE
Control
logic
CS2
Data
cont
Name
Function
Name
Function
CS1,CS2
Chip Select Inputs
I/O1~I/O8
Data Inputs/Outputs
OE
Output Enable
Vcc
Power
WE
Write Enable Input
Vss
Ground
A0~A16
Address Inputs
N.C
No Connection
相关PDF资料 |
PDF描述 |
|---|---|
| K7N403609B-QI22 | 128K X 36 ZBT SRAM, 2.6 ns, PQFP100 |
| K7Q161854A-FC20 | 1M X 18 QDR SRAM, 2.2 ns, PBGA165 |
| K7R161884B | 512Kx36 & 1Mx18 QDR II b4 SRAM |
| K7R163684B | 512Kx36 & 1Mx18 QDR II b4 SRAM |
| K7R323682 | 1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| K6T1008C2C-B | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:128K x8 bit Low Power CMOS Static RAM |
| K6T1008C2C-DB55 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:128K x8 bit Low Power CMOS Static RAM |
| K6T1008C2C-DB70 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:128K x8 bit Low Power CMOS Static RAM |
| K6T1008C2C-DB70000 | 制造商:Samsung SDI 功能描述: |
| K6T1008C2C-DL55 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:128K x8 bit Low Power CMOS Static RAM |
发布紧急采购，3分钟左右您将得到回复。