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参数资料
| 型号： | K6T1008C2C |
| 厂商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128K x8 bit Low Power CMOS Static RAM |
| 中文描述： | 128K的x8位低功耗CMOS静态RAM |
| 文件页数： | 7/10页 |
| 文件大小： | 189K |
| 代理商： | K6T1008C2C |
PRELIMINARY
K6T1008C2C Family
CMOS SRAM
Revision 2.0
November 1997
6
Address
Data Out
Previous Data Valid
Data Valid
TIMMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS1=OE=VIL, WE=VIH)
tAA
tRC
tOH
TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)
Data Valid
High-Z
CS1
Address
OE
Data out
NOTES (READ CYCLE)
1.
tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
levels.
2. At any given temperature and voltage condition,
tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device
interconnection.
CS2
tOH
tAA
tOLZ
tLZ
tOHZ
tHZ(1,2)
tRC
tCO2
tOE
tCO1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| K6T1008C2C-B | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:128K x8 bit Low Power CMOS Static RAM |
| K6T1008C2C-DB55 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:128K x8 bit Low Power CMOS Static RAM |
| K6T1008C2C-DB70 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:128K x8 bit Low Power CMOS Static RAM |
| K6T1008C2C-DB70000 | 制造商:Samsung SDI 功能描述: |
| K6T1008C2C-DL55 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:128K x8 bit Low Power CMOS Static RAM |
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