参数资料
型号: KIT33887DWBEVB
厂商: Freescale Semiconductor
文件页数: 10/37页
文件大小: 0K
描述: KIT EVAL 33887 5A H-BRIDGE SOIC
标准包装: 1
主要目的: 电源管理,H 桥驱动器(内部 FET)
嵌入式:
已用 IC / 零件: MC33887
主要属性: 5A 5 ~ 28V PWM 至 20kHz 有源电流限制
次要属性: 故障状态,睡眠模式,比例电流镜像输出
已供物品: 板,CD
相关产品: MC33887DWBR2-ND - IC H-BRIDGE 5A LOAD FDBK 54-SOIC
MC33887VWR2-ND - IC H-BRIDGE 5.0A W/CS 20-HSOP
MC33887PNBR2-ND - IC H-BRIDGE 5A CURR FDBK 36-PQFN
MC33887PNB-ND - IC H-BRIDGE CURR FDBK 5A 36-PQFN
MC33887DHR2-ND - IC H-BRIDGE 5A CURR FDBK 20-HSOP
MC33887VW-ND - IC H-BRIDGE 5.0A W/CS 20-HSOP
MC33887DWB-ND - IC H-BRIDGE 5.0A W/CS 54-SOIC
MC33887DH-ND - IC H-BRIDGE 5.0A W/CS 20-HSOP
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 4. STATIC ELECTRICAL CHARACTERISTICS
Characteristics noted under conditions 5.0 V ≤ V+ ≤ 28 V and -40 ° C ≤ T A ≤ 125 ° C unless otherwise noted. Typical values
noted reflect the approximate parameter mean at T A = 25 ° C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
POWER SUPPLY
POWER OUTPUTS (OUT1, OUT2)
Output ON-Resistance (18)
R DS(ON)
m Ω
5.0 V ≤ V+ ≤ 28 V, T J = 25°C
8.0 V ≤ V+ ≤ 28 V, T J = 150°C
5.0 V ≤ V+ ≤ 8.0 V, T J = 150°C
120
225
300
Active Current Limiting Threshold (via Internal Constant OFF-Time
PWM) on Low-Side MOSFETs (19)
High-Side Short Circuit Detection Threshold
Low-Side Short Circuit Detection Threshold
I LIM
I SCH
I SCL
5.2
11
8.0
6.5
7.8
A
A
A
Leakage Current (20)
I OUT(LEAK)
μ A
V OUT = V+
V OUT = Ground
Output MOSFET Body Diode Forward Voltage Drop
I OUT = 3.0 A
Overtemperature Shutdown
V F
100
30
200
60
2.0
V
°C
Thermal Limit
Hysteresis
T LIM
T HYS
175
10
225
30
HIGH-SIDE CURRENT SENSE FEEDBACK
Feedback Current
I FB
I OUT = 0 mA
I OUT = 500 mA
I OUT = 1.5 A
I OUT = 3.0 A
I OUT = 6.0 A
1.07
3.6
7.2
14.4
1.33
4.0
8.0
16
600
1.68
4.62
9.24
18.48
μ A
mA
mA
mA
mA
FAULT STATUS (21)
Fault Status Leakage Current (22)
I FS(LEAK)
μ A
V FS = 5.0 V
Fault Status SET Voltage (23)
I FS = 300 μ A
V FS(LOW)
10
1.0
V
Notes
18
19
20
21
22
23
Output-ON resistance as measured from output to V+ and ground.
Active current limitation applies only for the low-side MOSFETs.
Outputs switched OFF with D1 or D2 .
Fault Status output is an open Drain output requiring a pull-up resistor to 5.0 V.
Fault Status Leakage Current is measured with Fault Status HIGH and not SET.
Fault Status Set Voltage is measured with Fault Status LOW and SET with I FS = 300 μ A.
33887
Analog Integrated Circuit Device Data
10
Freescale Semiconductor
相关PDF资料
PDF描述
RYM08DTAT-S189 CONN EDGECARD 16POS R/A .156 SLD
MCP73834T-CNI/MF IC LI-ION/LI-POLY CTRLR 10DFN
ESM12DTBS-S189 CONN EDGECARD 24POS R/A .156 SLD
KIT33742DWEVB KIT FOR 33742 SBC WITH EHSCAN
EGM12DTBS-S189 CONN EDGECARD 24POS R/A .156 SLD
相关代理商/技术参数
参数描述
KIT33887EKEVBE 功能描述:电源管理IC开发工具 33887DWB FIESTA EVAL KIT RoHS:否 制造商:Maxim Integrated 产品:Evaluation Kits 类型:Battery Management 工具用于评估:MAX17710GB 输入电压: 输出电压:1.8 V
KIT33887EKEVBE 制造商:Freescale Semiconductor 功能描述:5.2A 20KHz Inductive load driver w/ Curr
KIT33887PNBEVB 功能描述:电源管理IC开发工具 33887 FIESTA PNB KIT RoHS:否 制造商:Maxim Integrated 产品:Evaluation Kits 类型:Battery Management 工具用于评估:MAX17710GB 输入电压: 输出电压:1.8 V
KIT33903BD3EVBE 功能描述:界面开发工具 3V DUAL LIN EVB KIT RoHS:否 制造商:Bourns 产品:Evaluation Boards 类型:RS-485 工具用于评估:ADM3485E 接口类型:RS-485 工作电源电压:3.3 V
KIT33903BD5EVBE 功能描述:界面开发工具 5V DUAL LIN EVB KIT RoHS:否 制造商:Bourns 产品:Evaluation Boards 类型:RS-485 工具用于评估:ADM3485E 接口类型:RS-485 工作电源电压:3.3 V