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参数资料
| 型号： | LE25CA322TT |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | PROM |
| 英文描述： | 4K X 8 SPI BUS SERIAL EEPROM, PDSO8 |
| 封装： | 0.150 INCH, MSOP-8 |
| 文件页数： | 2/14页 |
| 文件大小： | 217K |
| 代理商： | LE25CA322TT |
LE25CA322
No.NA1678-10/14
2-2. Status Register Write (WRSR)
The information in status registers BP0, BP1, and SRWP can be rewritten using the status register write command.
RDY, WEN, bit4, bit5, and bit6 are read-only bits and cannot be rewritten. The information in bits BP0, BP1, and
SRWP is stored in the non-volatile memory, and when it is written in these bits, the contents are retained even at
power-down.
“Figure 6 Status Register Write” shows the timing waveforms of status register write, and Figure 11 shows a status
register write flowchart. Consisting of the first and second bus cycles, the status register write command initiates the
internal write operation at the rising CS edge after the data has been input following (01h). By the operation of this
command, the information in bits BP0, BP1, and SRWP can be rewritten. Since bits RDY (bit0), WEN (bit1), bit4, bit5,
and bit6 of the status register cannot be written, no problem will arise if an attempt is made to set them to any value
when rewriting the status register. Status register write ends can be detected by RDY of status register read. Information
in the status register can be rewritten 1,000 times (min.). To initiate status register write, the logic level of the WP pin
must be set high and the status register WEN must be set to “1”.
Figure 6 Status Register Write
01
2 3 4 5 6
7 8
15
Mode3
tWPS
8CLK
Hight Impedance
DATA
tWPH
Self-timed
Write Cycle
tSRW
01h
Mode0
CS
WP
SCK
SI
SO
(00000001)
2-3. Contents of Each Status Register
RDY (bit0)
Ready/Busy detection
The RDY register is for detecting the write end. When it is “1”, the device is in a busy state, and when it is “0”, it means
that the write operation is completed.
WEN (bit1)
Write enable
The WEN register is for detecting whether the device can perform write operations. If it is set to “0”, the device will not
perform the write operation even if the write command is input. If it is set to “1”, the device can perform write operation
in any area that is not block-protected.
WEN can be controlled using the write enable and write disable commands. By inputting the write enable command
(06h), WEN can be set to “1”, and by inputting the write disable command (04h), it can be set to “0”. In the following
states, WEN is automatically set to “0” in order to protect against unintentional writing.
At power-on
Upon completion of write
Upon completion of status register write
If a write operation has not been performed inside the device because, for instance, the command input for any of the
write operations has failed or a write operation has been performed for a protected address, WEN will retain the status
established prior to the issue of the command concerned. Furthermore, its state will not be changed by a read operation.
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相关代理商/技术参数 |
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| LE25CB1282 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:EEPROM (SPI Bus) |
| LE25CB1282M | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Serial SPI EEPROM (SPI Bus)(128Kbit) |
| LE25CB5122M | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Serial SPI EEPROM (SPI Bus)(512Kbit) |
| LE25CB5122M-TLM-E | 制造商:Sony Semiconductor Solutions Division 功能描述: |
| LE25CB643M-TLM-E | 功能描述:电可擦除可编程只读存储器 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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