参数资料
型号: LH28F320SKTD-ZR
厂商: Sharp Microelectronics
文件页数: 18/70页
文件大小: 0K
描述: IC FLASH 32MBIT 70NS 48TSOP
产品变化通告: Symmetrical Flash Discontinuation 01/Dec/2005
标准包装: 50
格式 - 存储器: 闪存
存储器类型: FLASH
存储容量: 32M(4M x 8,2M x 16)
速度: 70ns
接口: 并联
电源电压: 2.7 V ~ 3.6 V,4.5 V ~ 5.5 V
工作温度: 0°C ~ 70°C
封装/外壳: 48-TSOP
供应商设备封装: 48-TSOP
包装: 托盘
其它名称: 425-2463
LHF32KZR
LHF32KZR
15
4.5 Query Command
Table 6. Example of Query Structure Output
Query database can be read by writing Query
Mode
Offset Address
Output
DQ 15~8 DQ 7~0
command (98H). Following the command write, read
cycle from address shown in Table 7~11 retrieve the
critical information to write, erase and otherwise
A 5 , A 4 , A 3 , A 2 , A 1 , A 0
1 , 0 , 0 , 0 , 0 , 0 (20H) High Z
X8 mode 1 , 0 , 0 , 0 , 0 , 1 (21H) High Z
"Q"
"Q"
control the flash component. A 0 of query offset
address is ignored when X8 mode (BYTE#=V IL ).
Query data are always presented on the low-byte
X16 mode
1, 0 , 0 , 0 , 1 , 0 (22H) High Z
1 , 0 , 0 , 0 , 1 , 1 (23H) High Z
A 5 , A 4 , A 3 , A 2 , A 1
1 , 0 , 0 , 0 , 0 (10H) 00H
"R"
"R"
"Q"
data output (DQ 0 -DQ 7 ). In x16 mode, high-byte
(DQ 8 -DQ 15 ) outputs 00H. The bytes not assigned to
any information or reserved for future use are set to
1 , 0 , 0 , 0 , 1 (11H)
00H
"R"
"0". This command functions independently of the
V PP voltage. RP# must be V IH .
4.5.1 Block Status Register
This field provides lock configuration and erase status for the specified block. These informations are only available
when device is ready (SR.7=1). If block erase or bank erase operation is finished irregulary, block erase status bit
will be set to "1". If bit 1 is "1", this block is invalid.
Table 7. Query Block Status Register
Offset
(Word Address)
(BA+2)H
Length
01H
Block Status Register
Description
bit0 Block Lock Configuration
0=Block is unlocked
1=Block is Locked
bit1 Block Erase Status
0=Last erase operation completed successfully
1=Last erase operation not completed successfully
bit2-7 reserved for future use
Note:
1. BA=The beginning of a Block Address.
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