- 您现在的位置：买卖IC网 > Datasheet目录337 > LH28F320SKTD-ZR (Sharp Microelectronics)IC FLASH 32MBIT 70NS 48TSOP Datasheet资料下载
参数资料
| 型号： | LH28F320SKTD-ZR |
| 厂商： | Sharp Microelectronics |
| 文件页数： | 37/70页 |
| 文件大小： | 0K |
| 描述： | IC FLASH 32MBIT 70NS 48TSOP |
| 产品变化通告： | Symmetrical Flash Discontinuation 01/Dec/2005 |
| 标准包装： | 50 |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 32M（4M x 8，2M x 16） |
| 速度： | 70ns |
| 接口： | 并联 |
| 电源电压： | 2.7 V ~ 3.6 V，4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 48-TSOP |
| 供应商设备封装： | 48-TSOP |
| 包装： | 托盘 |
| 其它名称： | 425-2463 LHF32KZR |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页当前第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页第64页第65页第66页第67页第68页第69页第70页
LHF32KZR
34
5.5 V CC , V PP , RP# Transitions
Block erase, bank erase, (multi) word/byte write and
block lock-bit configuration are not guaranteed if V PP
falls outside of a valid V PPH1/2/3 range, V CC falls
outside of a valid V CC1/2/3/4 range, or RP#=V IL . If V PP
error is detected, status register bit SR.3 is set to "1"
along with SR.4 or SR.5, depending on the attempted
operation. If RP# transitions to V IL during block
erase, bank erase, (multi) word/byte write or block
lock-bit configuration, STS(if set to RY/BY# mode)
will remain low until the reset operation is complete.
Then, the operation will abort and the device will
enter deep power-down. The aborted operation may
leave data partially altered. Therefore, the command
sequence must be repeated after normal operation is
restored. Device power-off or RP# transitions to V IL
clear the status register.
The CUI latches commands issued by system
software and is not altered by V PP or BE# transitions
or WSM actions. Its state is read array mode upon
power-up, after exit from deep power-down or after
V CC transitions below V LKO .
After block erase, bank erase, (multi) word/byte write
or block lock-bit configuration, even after V PP
transitions down to V PPLK , the CUI must be placed in
read array mode via the Read Array command if
subsequent access to the memory array is desired.
5.6 Power-Up/Down Protection
The device is designed to offer protection against
accidental block and bank erasure, (multi) word/byte
writing or block lock-bit configuration during power
transitions. Upon power-up, the device is indifferent
as to which power supply (V PP or V CC ) powers-up
first. Internal circuitry resets the CUI to read array
mode at power-up.
A system designer must guard against spurious
writes for V CC voltages above V LKO when V PP is
active. Since both WE# and BE# must be low for a
command write, driving either to V IH will inhibit writes.
The CUI’s two-step command sequence architecture
provides added level of protection against data
alteration.
In-system block lock and unlock capability prevents
inadvertent data alteration. The device is disabled
while RP#=V IL regardless of its control inputs state.
5.7 Power Dissipation
When designing portable systems, designers must
consider battery power consumption not only during
device operation, but also for data retention during
system idle time. Flash memory’s nonvolatility
increases usable battery life because data is retained
when system power is removed.
In addition, deep power-down mode ensures
extremely low power consumption even when system
power is applied. For example, portable computing
products and other power sensitive applications that
use an array of devices for solid-state storage can
consume negligible power by lowering RP# to V IL
standby or sleep modes. If access is again needed,
the devices can be read following the t PHQV and
t PHWL wake-up cycles required after RP# is first
raised to V IH . See AC Characteristics ? Read Only
and Write Operations and Figures 18, 19, 20, 21 for
more information.
相关PDF资料 |
PDF描述 |
|---|---|
| LHF00L28 | IC FLASH 16MBIT 70NS 48TSOP |
| LPM409 CHASSIS | STNRD 4SLOT CHASSIS W/INPUT LEAD |
| LS15RB1201J04 | POE SPLITTER 10.8W 12V @0.9A |
| LT1932ES6#TRMPBF | IC LED DRIVR WHITE BCKLGT TSOT-6 |
| LT1937ES5#TRMPBF | IC LED DRIVR WHITE BCKLGT TSOT-5 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| LH28F400BG | 制造商:SHARP 制造商全称:Sharp Electrionic Components 功能描述:4M-BIT(256KBx16) SmartVoltage Flash MEMORY |
| LH28F400BGB-BL12 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x16 Flash EEPROM |
| LH28F400BGB-BL85 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x16 Flash EEPROM |
| LH28F400BGB-TL12 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x16 Flash EEPROM |
| LH28F400BGB-TL85 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x16 Flash EEPROM |
发布紧急采购，3分钟左右您将得到回复。