参数资料
| 型号： | LM258DR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 11/14页 |
| 文件大小： | 0K |
| 描述： | IC OPAMP DUAL LOW POWER 8SOIC |
| 标准包装： | 1 |
| 放大器类型： | 通用 |
| 电路数： | 2 |
| 转换速率： | 0.6 V/µs |
| 增益带宽积： | 1MHz |
| 电流 - 输入偏压： | 45nA |
| 电压 - 输入偏移： | 2000µV |
| 电流 - 电源： | 1.5mA |
| 电流 - 输出 / 通道： | 40mA |
| 电压 - 电源，单路/双路(±)： | 3 V ~ 32 V，±1.5 V ~ 16 V |
| 工作温度： | -25°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 产品目录页面： | 1129 (CN2011-ZH PDF) |
| 其它名称： | LM258DR2GOSDKR |
LM258, LM358, LM358A, LM2904, LM2904A, LM2904V, NCV2904, NCV2904V
http://onsemi.com
6
CIRCUIT DESCRIPTION
The LM358 series is made using two internally
compensated, twostage operational amplifiers. The first
stage of each consists of differential input devices Q20 and
Q18 with input buffer transistors Q21 and Q17 and the
differential to single ended converter Q3 and Q4. The first
stage performs not only the first stage gain function but also
performs the level shifting and transconductance reduction
functions. By reducing the transconductance, a smaller
compensation capacitor (only 5.0 pF) can be employed, thus
saving chip area. The transconductance reduction is
accomplished by splitting the collectors of Q20 and Q18.
Another feature of this input stage is that the input common
mode range can include the negative supply or ground, in
single supply operation, without saturating either the input
devices or the differential to singleended converter. The
second stage consists of a standard current source load
amplifier stage.
Each amplifier is biased from an internalvoltage
regulator which has a low temperature coefficient thus
giving each amplifier good temperature characteristics as
well as excellent power supply rejection.
Figure 3. Large Signal Voltage
Follower Response
5.0
ms/DIV
1.0
V/DIV
VCC = 15 Vdc
RL = 2.0 kW
TA = 25°C
A
VOL
,OPEN
LOOP
VOL
TAGE
GAIN
(dB)
V
,INPUT
VOL
TAGE
(V)
I
Figure 4. Input Voltage Range
Figure 5. LargeSignal Open Loop Voltage Gain
18
16
14
12
10
8.0
6.0
4.0
2.0
0
20
0
2.0
4.0
6.0
8.0
10
12
14
16
18
20
VCC/VEE, POWER SUPPLY VOLTAGES (V)
120
100
80
60
40
20
0
-20
1.0
10
100
1.0 k
10 k
100 k
1.0 M
f, FREQUENCY (Hz)
Negative
Positive
VCC = 15 V
VEE = Gnd
TA = 25°C
相关PDF资料 |
PDF描述 |
|---|---|
| PEC14DFBN | CONN HEADER .100 DUAL STR 28POS |
| 929850-01-31-10 | CONN RECEPT .100 SNGL STR 31POS |
| 1-292173-8 | CONN HEADER 8POS SMD R/A TIN NAT |
| 1445093-4 | CONN HEADER 3MM 4POS GOLD T/H |
| 1445050-4 | CONN HEADER 3MM 4POS TIN T/H |
相关代理商/技术参数 |
参数描述 |
|---|---|
| LM258DR2G-CUT TAPE | 制造商:ON 功能描述:LM Series 0.6 V/us 32 V SMT Single Supply Quad Operational Amplifier - SOIC-8 |
| LM258DRE4 | 功能描述:运算放大器 - 运放 Dual Operational Amplifier RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比（最小值）:63 dB 输入补偿电压:1 mV 输入偏流（最大值）:10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel |
| LM258DRG3 | 功能描述:运算放大器 - 运放 Dual Op Amp RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比（最小值）:63 dB 输入补偿电压:1 mV 输入偏流（最大值）:10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel |
| LM258DRG4 | 功能描述:运算放大器 - 运放 Dual Operational Amplifier RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比（最小值）:63 dB 输入补偿电压:1 mV 输入偏流（最大值）:10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel |
| LM258DT | 功能描述:运算放大器 - 运放 Dual Low Power RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比（最小值）:63 dB 输入补偿电压:1 mV 输入偏流（最大值）:10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。