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参数资料
| 型号： | LMR10510YSDX/NOPB |
| 厂商： | National Semiconductor |
| 文件页数： | 13/26页 |
| 文件大小： | 0K |
| 描述： | IC REG BUCK ADJ 1A 6LLP |
| 标准包装： | 4,500 |
| 系列： | SIMPLE SWITCHER® |
| 类型： | 降压（降压） |
| 输出类型： | 可调式 |
| 输出数： | 1 |
| 输出电压： | 0.6 V ~ 4.5 V |
| 输入电压： | 3 V ~ 5.5 V |
| PWM 型： | 电流模式 |
| 频率 - 开关： | 3MHz |
| 电流 - 输出： | 1A |
| 同步整流器： | 无 |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 包装： | 带卷 (TR) |
| 供应商设备封装： | 6-LLP-EP（3x3） |
SNVS727B – OCTOBER 2011 – REVISED APRIL 2013
D=
V OUT + V D + V DCR
V IN + V D + V DCR - V SW
The conduction losses in the free-wheeling Schottky diode are calculated as follows:
P DIODE = V D x I OUT x (1-D)
Often this is the single most significant power loss in the circuit. Care should be taken to choose a Schottky
diode that has a low forward voltage drop.
Another significant external power loss is the conduction loss in the output inductor. The equation can be
simplified to:
P IND = I OUT2 x R DCR
The LMR10510 conduction loss is mainly associated with the internal PFET:
P COND = (I OUT2 x D) 1 +
1
3
x
' i L
I OUT
2
R DSON
If the inductor ripple current is fairly small, the conduction losses can be simplified to:
P COND = I OUT2 x R DSON x D
Switching losses are also associated with the internal PFET. They occur during the switch on and off transition
periods, where voltages and currents overlap resulting in power loss. The simplest means to determine this loss
is to empirically measuring the rise and fall times (10% to 90%) of the switch at the switch node.
Switching Power Loss is calculated as follows:
P SWR = 1/2(V IN x I OUT x F SW x T RISE )
P SWF = 1/2(V IN x I OUT x F SW x T FALL )
P SW = P SWR + P SWF
Another loss is the power required for operation of the internal circuitry:
P Q = I Q x V IN
I Q is the quiescent operating current, and is typically around 3.3mA for the 1.6MHz frequency option.
Typical Application power losses are:
Table 1. Power Loss Tabulation
V IN
5.0V
V OUT
I OUT
V D
F SW
I Q
T RISE
T FALL
R DS(ON)
IND DCR
D
η
3.3V
1.0A
0.45V
1.6MHz
3.3mA
4nS
4nS
150m ?
70m ?
0.667
88%
P OUT
P DIODE
P Q
P SWR
P SWF
P COND
P IND
P LOSS
P INTERNAL
3.3W
150mW
17mW
16mW
16mW
100mW
70mW
369mW
149mW
Σ P COND + P SW + P DIODE + P IND + P Q = P LOSS
Σ P COND + P SWF + P SWR + P Q = P INTERNAL
P INTERNAL = 149mW
Copyright ? 2011–2013, Texas Instruments Incorporated
Product Folder Links: LMR10510
13
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