参数资料
| 型号： | LT1169CS8 |
| 厂商： | Linear Technology |
| 文件页数： | 2/12页 |
| 文件大小： | 0K |
| 描述： | IC OPAMP JFET LONOISE DUAL 8SOIC |
| 标准包装： | 100 |
| 放大器类型： | J-FET |
| 电路数： | 2 |
| 转换速率： | 4.2 V/µs |
| 增益带宽积： | 5.3MHz |
| 电流 - 输入偏压： | 4pA |
| 电压 - 输入偏移： | 600µV |
| 电流 - 电源： | 5.3mA |
| 电压 - 电源，单路/双路(±)： | ±4.5 V ~ 20 V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 管件 |
10
LT1169
U
S
A
O
PPLICATI
WU
U
I FOR ATIO
Input offset current = 3pA
Input resistance = 1013
Input noise = 3.4
VP-P
High Speed Operation
The low noise performance of the LT1169 was achieved by
enlarging the input JFET differential pair to maximize the
first stage gain. Enlarging the JFET geometry also increases
the parasitic gate capacitance, which if left unchecked, can
result in increased overshoot and ringing. When the feed-
back around the op amp is resistive (RF), a pole will be
created with RF, the source resistance and capacitance
(RS,CS), and the amplifier input capacitance (CIN = 1.5pF).
In closed-loop gain configurations with RS and RF in the
M
range(Figure6),thispolecancreateexcessphaseshift
and even oscillation. A small capacitor (CF) in parallel with
RF eliminates this problem. With RS(CS + CIN) = RFCF, the
effect of the feedback pole is completely removed.
Light Balance Detection Circuit
Unity-Gain Buffer with Extended Load Capacitance
Drive Capability
TYPICAL APPLICATIONS N
U
Assume CMRRA = 50V/V or 86dB,
and CMRRB = 39V/V or 88dB,
then
CMRR = 11V/V or 99dB;
if CMRRB = –39V/V which is still 88dB,
then
CMRR = 89V/V or 81dB
By specifying and guaranteeing all of these matching
parameters, the LT1169 can significantly improve the
performance of matching-dependent circuits.
Typical performance of the instrumentation amplifier:
Input offset voltage = 0.8mV
Input bias current = 4pA
Figure 5. Three Op Amp Instrumentation Amplifier
–
+
LT1169 F06
OUTPUT
RF
RS
CS
CIN
CF
Figure 6
4
2
3
OUTPUT
C1
30pF
R7
10k
R6
10k
LT1169 F05
GAIN =
BANDWIDTH =
INPUT REFERRED NOISE =
WIDEBAND NOISE DC TO 330kHz =
CL ≤
100
330kHz
8.7nV/
√Hz AT 1kHz
5.3
VRMS
0.01
F
IN–
15V
8
1
–15V
–
+
–
+
1/2
LT1169
IC1
1/2
LT1169
IC1
IN+
R3
1k
R2
200
R1
1k
7
6
5
R4
1k
1
2
CL
3
–
+
1/2
LT1169
IC2
R5
1k
LT1169 TA03
VOUT
–
+
1/2 LT1169
C1
VIN
R2
1k
CL
R1
33
C1 = CL ≤ 0.1F
OUTPUT SHORT CIRCUIT CURRENT (
30mA) WILL LIMIT THE RATE
AT WHICH THE VOLTAGE CAN CHANGE ACROSS LARGE CAPACITORS
(I = C
dV
)
dt
LT1169 TA04
VOUT = 1M × (I1 – I2)
PD1,PD2 = HAMAMATSU S1336-5BK
WHEN EQUAL LIGHT ENTERS PHOTODIODES, VOUT < 3mV.
–
+
1/2 LT1169
R1
1M
C1
3pF TO 5pF
PD1
PD2
I1
I2
VOUT
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相关代理商/技术参数 |
参数描述 |
|---|---|
| LT1169CS8#PBF | 功能描述:IC OPAMP JFET LONOISE DUAL 8SOIC RoHS:是 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 标准包装:2,500 系列:- 放大器类型:通用 电路数:4 输出类型:- 转换速率:0.6 V/µs 增益带宽积:1MHz -3db带宽:- 电流 - 输入偏压:45nA 电压 - 输入偏移:2000µV 电流 - 电源:1.4mA 电流 - 输出 / 通道:40mA 电压 - 电源，单路/双路(±):3 V ~ 32 V，±1.5 V ~ 16 V 工作温度:0°C ~ 70°C 安装类型:表面贴装 封装/外壳:14-TSSOP（0.173"，4.40mm 宽） 供应商设备封装:14-TSSOP 包装:带卷 (TR) 其它名称:LM324ADTBR2G-NDLM324ADTBR2GOSTR |
| LT1169CS8#TR | 功能描述:IC OPAMP JFET DUAL LONOISE 8SOIC RoHS:否 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 标准包装:73 系列:Over-The-Top® 放大器类型:通用 电路数:4 输出类型:满摆幅 转换速率:0.07 V/µs 增益带宽积:200kHz -3db带宽:- 电流 - 输入偏压:1nA 电压 - 输入偏移:285µV 电流 - 电源:50µA 电流 - 输出 / 通道:25mA 电压 - 电源，单路/双路(±):2 V ~ 44 V，±1 V ~ 22 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:16-WFDFN 裸露焊盘 供应商设备封装:16-DFN-EP（5x3） 包装:管件 |
| LT1169CS8#TRPBF | 功能描述:IC OPAMP JFET LONOISE DUAL 8SOIC RoHS:是 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 标准包装:2,500 系列:- 放大器类型:通用 电路数:1 输出类型:满摆幅 转换速率:0.11 V/µs 增益带宽积:350kHz -3db带宽:- 电流 - 输入偏压:4nA 电压 - 输入偏移:20µV 电流 - 电源:260µA 电流 - 输出 / 通道:20mA 电压 - 电源，单路/双路(±):2.7 V ~ 36 V，±1.35 V ~ 18 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SO 包装:带卷 (TR) |
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