参数资料
| 型号： | LT1619ES8#PBF |
| 厂商： | Linear Technology |
| 文件页数： | 7/20页 |
| 文件大小： | 0K |
| 描述： | IC REG CTRLR PWM CM 8-SOIC |
| 标准包装： | 100 |
| PWM 型： | 电流模式 |
| 输出数： | 1 |
| 频率 - 最大： | 500kHz |
| 占空比： | 92% |
| 电源电压： | 1.9 V ~ 18 V |
| 降压： | 无 |
| 升压： | 是 |
| 回扫： | 是 |
| 反相： | 无 |
| 倍增器： | 无 |
| 除法器： | 无 |
| Cuk： | 是 |
| 隔离： | 是 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 包装： | 管件 |
| 产品目录页面： | 1328 (CN2011-ZH PDF) |
LT1619
OPERATIO
or less than the number specified in Table 1 are accept-
able. The maximum duty cycle is essentially unaffected by
synchronization.
The device will go into shutdown mode if the S/S pin
voltage stays below the shutdown threshold of 0.45V for
Table 1. Maximum Allowable Rise Time of Synchronization
Pulse. Rise Time Can Be Slower if Clock Amplitude is Higher
SYNCHRONIZATION MAXIMUM ALLOWABLE
more than 33 μ s. This shutdown delay is reset whenever
the S/S pin voltage rises above the shutdown threshold.
Applying a logic low signal at the S/S pin causes the gate
drive output to go low. Although all circuits in the LT1619
are disabled, the pull-down circuit in the MOSFET buffer is
still biased on. It is capable of shunting any leakage or
transient current at the GATE pin to ground, eliminating
the need for an external bleed resistor. The LT1619 con-
sumes 15 μ A in shutdown.
AMPLITUDE (V)
1.2
1.5
2.0
2.5
3.0
RISE TIME (ns)
120
220
350
470
530
The LT1619 is guaranteed to start with a minimum V IN of
1.85V. Comparator A2 senses the input voltage and gen-
erates an undervoltage lockout (UVLO) signal if V IN falls
below this minimum. While in undervoltage lockout, V C is
pulled low and the LT1619 stops switching. The supply
current drawn by the device falls to 140 μ A.
APPLICATIO S I FOR ATIO
Inductor
The value of the inductor is usually selected so that the
peak-to-peak ripple current is less than 30% of the maxi-
mum inductor current. The inductor should be able to
handle the maximum inductor current at full load without
saturation. Powder iron cores are not suitable for high
frequency switch mode power supply applications be-
cause of their high core losses. Ferrite cores have very low
core losses and are the material of choice for high fre-
quency DC/DC converters.
Power MOSFET Driver
The LT1619 is capable of driving a low side N-channel
pin (DRV) for design flexibility. In a boost converter
design, the DRV pin can be tied to the converter output if
the minimum input voltage is insufficient to fully enhance
the power MOSFET. During start-up, the MOSFET is driven
with a gate voltage starting from V IN – V D (V D is the
forward voltage of the rectifying diode). As the output
voltage rises, the gate drive also increases until steady
state is reached. If the steady-state converter output
voltage exceeds the maximum allowable gate source
voltage and the input voltage is sufficient to enhance the
MOSFET, the DRV pin is tied to the input supply. For a
SEPIC converter, the DRV pin can be tied to the input or
diode OR’ed from the input and the output (Figure 4).
power MOSFET with up to 60nC of total gate charge (Q g ).
An external driver is recommended for MOSFETs with
greater than 80nC of total gate charge. The peak gate drive
current varies from 0.5A with V DRV = 2.5V to 1.2A with
V IN
?
DRV
+
V OUT
V DRV = 10V. The MOSFET driver is capable of charging the
gate of the power MOSFET to within 350mV of the upper
gate drive supply rail (DRV). It can also pull the gate of the
LT1619
GND
R S
?
1619 F03
MOSFET to within 100mV of ground during turnoff. The
upper supply rail of the gate drive is brought out as a device
Figure 4. SEPIC Converter with Diode OR’ed Gate Drive Supply
1619fa
7
相关PDF资料 |
PDF描述 |
|---|---|
| ABC13DRXI-S734 | CONN EDGECARD 26POS DIP .100 SLD |
| ABC17DRTH-S734 | CONN EDGECARD 34POS DIP .100 SLD |
| LTC3851EUD#PBF | IC REG CTRLR BUCK PWM CM 16-QFN |
| RCA24DTAD | CONN EDGECARD 48POS R/A .125 SLD |
| RCA28DRMS | CONN EDGECARD 56POS .125 SQ WW |
相关代理商/技术参数 |
参数描述 |
|---|---|
| LT1620 | 制造商:LINER 制造商全称:Linear Technology 功能描述:Rail-to-Rail Current Sense Amplifier |
| LT1620CGN | 功能描述:IC AMP R-R CURRENT SENSE 16-SSOP RoHS:否 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 标准包装:50 系列:- 放大器类型:通用 电路数:2 输出类型:满摆幅 转换速率:1.8 V/µs 增益带宽积:6.5MHz -3db带宽:4.5MHz 电流 - 输入偏压:5nA 电压 - 输入偏移:100µV 电流 - 电源:65µA 电流 - 输出 / 通道:35mA 电压 - 电源，单路/双路(±):1.8 V ~ 5.25 V，±0.9 V ~ 2.625 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:10-TFSOP，10-MSOP（0.118"，3.00mm 宽） 供应商设备封装:10-MSOP 包装:管件 |
| LT1620CGN#PBF | 功能描述:IC AMP R-R CURRENT SENSE 16-SSOP RoHS:是 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 标准包装:50 系列:- 放大器类型:通用 电路数:2 输出类型:满摆幅 转换速率:1.8 V/µs 增益带宽积:6.5MHz -3db带宽:4.5MHz 电流 - 输入偏压:5nA 电压 - 输入偏移:100µV 电流 - 电源:65µA 电流 - 输出 / 通道:35mA 电压 - 电源，单路/双路(±):1.8 V ~ 5.25 V，±0.9 V ~ 2.625 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:10-TFSOP，10-MSOP（0.118"，3.00mm 宽） 供应商设备封装:10-MSOP 包装:管件 |
| LT1620CGN#TR | 功能描述:IC AMP CURRENT SENSE R-R 16SSOP RoHS:否 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 标准包装:50 系列:LinCMOS™ 放大器类型:通用 电路数:4 输出类型:- 转换速率:0.05 V/µs 增益带宽积:110kHz -3db带宽:- 电流 - 输入偏压:0.7pA 电压 - 输入偏移:210µV 电流 - 电源:57µA 电流 - 输出 / 通道:30mA 电压 - 电源，单路/双路(±):3 V ~ 16 V，±1.5 V ~ 8 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:14-SOIC（0.154"，3.90mm 宽） 供应商设备封装:14-SOIC 包装:管件 产品目录页面:865 (CN2011-ZH PDF) 其它名称:296-1834296-1834-5 |
| LT1620CGN#TRPBF | 功能描述:IC AMP R-R CURRENT SENSE 16-SSOP RoHS:是 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 标准包装:50 系列:LinCMOS™ 放大器类型:通用 电路数:4 输出类型:- 转换速率:0.05 V/µs 增益带宽积:110kHz -3db带宽:- 电流 - 输入偏压:0.7pA 电压 - 输入偏移:210µV 电流 - 电源:57µA 电流 - 输出 / 通道:30mA 电压 - 电源，单路/双路(±):3 V ~ 16 V，±1.5 V ~ 8 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:14-SOIC（0.154"，3.90mm 宽） 供应商设备封装:14-SOIC 包装:管件 产品目录页面:865 (CN2011-ZH PDF) 其它名称:296-1834296-1834-5 |
发布紧急采购，3分钟左右您将得到回复。