参数资料
型号: LT3580MPMS8E#TRPBF
厂商: Linear Technology
文件页数: 17/28页
文件大小: 0K
描述: IC REG BOOST INV SEPIC 2A 8MSOP
标准包装: 2,500
类型: 升压(升压),反相,Sepic
输出数: 1
输入电压: 2.5 V ~ 32 V
PWM 型: 电流模式
频率 - 开关: 200kHz ~ 2.5MHz
电流 - 输出: 2A
同步整流器:
工作温度: -55°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-TSSOP,8-MSOP(0.118",3.00mm 宽)裸露焊盘
包装: 带卷 (TR)
供应商设备封装: 8-MSOP-EP
LT3580
APPLICATIONS INFORMATION
GND
GND
1
8
SYNC
1
8
SYNC
C1
2
9
7
V IN
C1
L1
2
3
4
9
7
6
5
SHDN
V IN
L1
SW
3
4
6
5
SHDN
SW
L2
C2
V OUT
D1
C2
3580 F09
VIAS TO GROUND
PLANE REQUIRED
TO IMPROVE
THERMAL
PERFORMANCE
D1
C3
VIAS TO GROUND
PLANE REQUIRED
TO IMPROVE
THERMAL
PERFORMANCE
V OUT
3580 F10
Figure 9. Suggested Component Placement for Boost Topology
(Both DFN and MSOP Packages. Not to Scale). Pin 9 (Exposed
Pad) Must Be Soldered Directly to the Local Ground Plane for
Adequate Thermal Performance. Multiple Vias to Additional
Ground Planes Will Improve Thermal Performance
Figure 10. Suggested Component Placement for Sepic Topology
(Both DFN And MSOP Packages. Not to Scale). Pin 9 (Exposed
Pad) Must Be Soldered Directly to the Local Ground Plane for
Adequate Thermal Performance. Multiple Vias to Additional
Ground Planes Will Improve Thermal Performance
GND
1
8
SYNC
V IN
C1
2
3
4
9
7
6
5
SHDN
L1
SW
L2
C2
D1
VIAS TO GROUND
V OUT
C3
3580 F11
PLANE REQUIRED
TO IMPROVE
THERMAL
PERFORMANCE
Figure 11. Suggested Component Placement for Inverting Topology (Both DFN and MSOP Packages. Not to Scale).
Note Cut in Ground Copper at Diode’s Cathode. Pin 9 (Exposed Pad) Must be Soldered Directly to Local Ground
Plane for Adequate Thermal Performance. Multiple Vias to Additional Ground Planes Will Improve Thermal
Performance
3580fg
17
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