参数资料
型号: LT3757IDD#PBF
厂商: Linear Technology
文件页数: 20/36页
文件大小: 0K
描述: IC REG CTRLR BST FLYBK INV 10DFN
产品培训模块: LT3757 and LT3758 - Boost, Flyback, SEPIC and Inverting Controllers
标准包装: 121
PWM 型: 电流模式
输出数: 1
频率 - 最大: 1MHz
电源电压: 2.9 V ~ 40 V
降压:
升压:
回扫:
反相:
倍增器:
除法器:
Cuk:
隔离:
工作温度: -40°C ~ 125°C
封装/外壳: 10-WFDFN 裸露焊盘
包装: 管件
LT3757/LT3757A
APPLICATIONS INFORMATION
C CN =
R SENSE =
where V SN is the snubber capacitor voltage. A smaller
V SN results in a larger snubber loss. A reasonable V SN is
2 to 2.5 times of:
V OUT ? N P
N S
L LK is the leakage inductance of the primary winding, which
is usually specified in the transformer characteristics. L LK
can be obtained by measuring the primary inductance with
the secondary windings shorted. The snubber capacitor
value (C CN ) can be determined using the following equation:
V SN
? V SN ? R CN ? f
where ?V SN is the voltage ripple across C CN . A reasonable
?V SN is 5% to 10% of V SN . The reverse voltage rating of
D SN should be higher than the sum of V SN and V IN(MAX) .
Flyback Converter: Sense Resistor Selection
In a flyback converter, when the power switch is turned
on, the current flowing through the sense resistor
(I SENSE ) is:
I SENSE = I LP
Set the sense voltage at I LP(PEAK) to be the minimum of
the SENSE current limit threshold with a 20% margin. The
sense resistor value can then be calculated to be:
80mV
I LP(PEAK)
Flyback Converter: Power MOSFET Selection
For the flyback configuration, the MOSFET is selected with
a V DC rating high enough to handle the maximum V IN , the
reflected secondary voltage and the voltage spike due to
the leakage inductance. Approximate the required MOSFET
V DC rating using:
BV DSS > V DS(PEAK)
where:
V DS(PEAK) = V IN(MAX) + V SN
The power dissipated by the MOSFET in a flyback con-
verter is:
P FET = I 2M(RMS) ? R DS(ON) + 2 ? V 2DS(PEAK) ? I L(MAX) ?
C RSS ? f /1A
The first term in this equation represents the conduction
losses in the device, and the second term, the switching
loss. C RSS is the reverse transfer capacitance, which is
usually specified in the MOSFET characteristics.
From a known power dissipated in the power MOSFET, its
junction temperature can be obtained using the following
equation:
T J = T A + P FET ? θ JA = T A + P FET ? ( θ JC + θ CA )
T J must not exceed the MOSFET maximum junction
temperature rating. It is recommended to measure the
MOSFET temperature in steady state to ensure that absolute
maximum ratings are not exceeded.
3757afd
20
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