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| 型号： | LTC1539CGW |
| 厂商： | Linear Technology |
| 文件页数： | 14/32页 |
| 文件大小： | 0K |
| 描述： | IC REG CTRLR BUCK PWM CM 36-SSOP |
| 标准包装： | 32 |
| PWM 型： | 电流模式 |
| 输出数： | 2 |
| 频率 - 最大： | 138kHz |
| 占空比： | 99% |
| 电源电压： | 3.5 V ~ 30 V |
| 降压： | 是 |
| 升压： | 无 |
| 回扫： | 无 |
| 反相： | 无 |
| 倍增器： | 无 |
| 除法器： | 无 |
| Cuk： | 无 |
| 隔离： | 无 |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 36-BSOP（0.295"，7.50mm 宽） |
| 包装： | 管件 |
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LTC1538-AUX/LTC1539
APPLICATIO N S I N FOR M ATIO N
P MAIN = OUT ( I MAX DS ( ON ) +
) 2 ( 1 + δ ) R
The MOSFET power dissipations at maximum output
current are given by:
V
V IN
generally a good compromise for both regions of opera-
tion due to the relatively small average current.
C IN and C OUT Selection
In continuous mode, the source current of the top
k ( V IN )
1.85
( I MAX )( C RSS )( f )
N-channel MOSFET is a square wave of duty cycle V OUT /
V IN . To prevent large voltage transients, a low ESR input
capacitor sized for the maximum RMS current must be
P SYNC = IN OUT ( I MAX DS ( ON )
) 2 ( 1 + δ ) R
[ V OUT ( V IN – V OUT ) ] 1 / 2
? V OUT L ? ESR +
≈ ? I
?
4 fC OUT ?
V – V
V IN
where δ is the temperature dependency of R DS(ON) and k
is a constant inversely related to the gate drive current.
Both MOSFETs have I 2 R losses while the topside
N-channel equation includes an additional term for transi-
tion losses, which are highest at high input voltages. For
V IN < 20V the high current efficiency generally improves
with larger MOSFETs, while for V IN > 20V the transition
losses rapidly increase to the point that the use of a higher
R DS(ON) device with lower C RSS actual provides higher
efficiency. The synchronous MOSFET losses are greatest
at high input voltage or during a short circuit when the duty
cycle in this switch is nearly 100%. Refer to the Foldback
Current Limiting section for further applications information.
The term (1 + δ ) is generally given for a MOSFET in the
form of a normalized R DS(ON) vs Temperature curve, but
δ = 0.005/ ° C can be used as an approximation for low
voltage MOSFETs. C RSS is usually specified in the MOSFET
characteristics. The constant k = 2.5 can be used to
estimate the contributions of the two terms in the main
switch dissipation equation.
The Schottky diode D1 shown in Figure 1 serves two
purposes. During continuous synchronous operation, D1
conducts during the dead-time between the conduction of
the two large power MOSFETs. This prevents the body
diode of the bottom MOSFET from turning on and storing
charge during the dead-time, which could cost as much as
1% in efficiency. During low current operation, D1 oper-
ates in conjunction with the small top MOSFET to provide
an efficient low current output stage. A 1A Schottky is
14
used. The maximum RMS capacitor current is given by:
C IN Required I RMS ≈ I MAX
V IN
This formula has a maximum at V IN = 2V OUT , where I RMS =
I OUT /2. This simple worst-case condition is commonly used
for design because even significant deviations do not offer
much relief. Note that capacitor manufacturer’s ripple current
ratings are often based on only 2000 hours of life. This makes
it advisable to further derate the capacitor or to choose a
capacitor rated at a higher temperature than required. Several
capacitors may also be paralleled to meet size or height
requirements in the design. Always consult the manufacturer
if there is any question.
The selection of C OUT is driven by the required effective
series resistance (ESR). Typically, once the ESR require-
ment is satisfied the capacitance is adequate for filtering.
The output ripple ( ? V OUT ) is approximated by:
? 1 ?
?
where f = operating frequency, C OUT = output capacitance
and ? I L = ripple current in the inductor. The output ripple
is highest at maximum input voltage since ? I L increases
with input voltage. With ? I L = 0.4I OUT(MAX) the output
ripple will be less than 100mV at max V IN assuming:
C OUT Required ESR < 2R SENSE
Manufacturers such as Nichicon, United Chemicon and
Sanyo should be considered for high performance through-
hole capacitors. The OS-CON semiconductor dielectric
capacitor available from Sanyo has the lowest (ESR size)
product of any aluminum electrolytic at a somewhat
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| LTC1539CGW#PBF | 功能描述:IC REG CTRLR BUCK PWM CM 36-SSOP RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 标准包装:4,500 系列:PowerWise® PWM 型:控制器 输出数:1 频率 - 最大:1MHz 占空比:95% 电源电压:2.8 V ~ 5.5 V 降压:是 升压:无 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:无 工作温度:-40°C ~ 125°C 封装/外壳:6-WDFN 裸露焊盘 包装:带卷 (TR) 配用:LM1771EVAL-ND - BOARD EVALUATION LM1771 其它名称:LM1771SSDX |
| LTC1539CGW#TR | 功能描述:IC REG CTRLR BUCK PWM CM 36-SSOP RoHS:否 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 标准包装:4,500 系列:PowerWise® PWM 型:控制器 输出数:1 频率 - 最大:1MHz 占空比:95% 电源电压:2.8 V ~ 5.5 V 降压:是 升压:无 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:无 工作温度:-40°C ~ 125°C 封装/外壳:6-WDFN 裸露焊盘 包装:带卷 (TR) 配用:LM1771EVAL-ND - BOARD EVALUATION LM1771 其它名称:LM1771SSDX |
| LTC1539CGW#TRPBF | 功能描述:IC REG CTRLR BUCK PWM CM 36-SSOP RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 标准包装:4,500 系列:PowerWise® PWM 型:控制器 输出数:1 频率 - 最大:1MHz 占空比:95% 电源电压:2.8 V ~ 5.5 V 降压:是 升压:无 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:无 工作温度:-40°C ~ 125°C 封装/外壳:6-WDFN 裸露焊盘 包装:带卷 (TR) 配用:LM1771EVAL-ND - BOARD EVALUATION LM1771 其它名称:LM1771SSDX |
| LTC1539IGW | 功能描述:IC REG CTRLR BUCK PWM CM 36-SSOP RoHS:否 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 标准包装:4,500 系列:PowerWise® PWM 型:控制器 输出数:1 频率 - 最大:1MHz 占空比:95% 电源电压:2.8 V ~ 5.5 V 降压:是 升压:无 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:无 工作温度:-40°C ~ 125°C 封装/外壳:6-WDFN 裸露焊盘 包装:带卷 (TR) 配用:LM1771EVAL-ND - BOARD EVALUATION LM1771 其它名称:LM1771SSDX |
| LTC1539IGW#PBF | 功能描述:IC REG CTRLR BUCK PWM CM 36-SSOP RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 标准包装:4,500 系列:PowerWise® PWM 型:控制器 输出数:1 频率 - 最大:1MHz 占空比:95% 电源电压:2.8 V ~ 5.5 V 降压:是 升压:无 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:无 工作温度:-40°C ~ 125°C 封装/外壳:6-WDFN 裸露焊盘 包装:带卷 (TR) 配用:LM1771EVAL-ND - BOARD EVALUATION LM1771 其它名称:LM1771SSDX |
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