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参数资料
| 型号： | LTC1753CSW#TR |
| 厂商： | Linear Technology |
| 文件页数： | 14/24页 |
| 文件大小： | 0K |
| 描述： | IC REG SW 5BIT PROG SYNC 20SOIC |
| 标准包装： | 1,000 |
| 应用： | 控制器，Intel Pentium? III |
| 输入电压： | 5V |
| 输出数： | 1 |
| 输出电压： | 1.3 V ~ 3.5 V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 20-SOIC（0.295"，7.50mm 宽） |
| 供应商设备封装： | 20-SOIC |
| 包装： | 带卷 (TR) |
LTC1753
P MAX ( Q 1 ) ( V IN ) ??? P MAX ( Q 1 ) ???
R DS ( ) Q 1 =
[ DC ( ) Q 1 ] ( I MAX ) ( V OUT )( I MAX ) 2
P MAX ( Q 2 ) ( V IN ) ? P MAX ( Q 2 ) ?
R DS ( ON ) Q 2 =
[ DC ( ) 2 Q ] ( I MAX ) ( V IN OUT )( I MAX ) 2
? V
( 5 V )( 1 . 39 W ) = 0 . 019 ?
( )
( 2 . 8 V )( 11 . 2 A )
R DS ON Q 1 =
( )( ) = 0 . 025 ?
R DS ( ON ) Q 2 =
( )( ) A 2 .
5 V ? 2 . 8 V 11
APPLICATIO S I FOR ATIO
The R DS(ON) required for a given conduction loss can now
be calculated by rearranging the relation P = I 2 R.
ON =
2
=
2
P MAX should be calculated based primarily on required
efficiency or allowable thermal dissipation. A typical high
efficiency circuit designed with a 5V input and a 2.8V,
11.2A output might allow no more than 4% efficiency loss
at full load for each MOSFET. Assuming roughly 90%
efficiency at this current level, this gives a P MAX value of:
[(2.8)(11.2A/0.9)(0.04)] = 1.39W per FET
and a required R DS(ON) of:
2
5 V 1 . 39 W
2
Note also that while the required R DS(ON) values suggest
large MOSFETs, the dissipation numbers are only 1.39W
per device or less––large TO-220 packages and heat sinks
are not necessarily required in high efficiency applica-
tions. Siliconix Si4410DY or International Rectifier IRF7413
(both in SO-8) or Siliconix SUD50N03 or Motorola
MTD20N03HDL (both in D PAK) are small footprint sur-
face mount devices with R DS(ON) values below 0.03 ? at 5V
of gate drive that work well in LTC1753 circuits. With
higher output voltages, the R DS(ON) of Q1 may need to be
significantly lower than that for Q2. These conditions can
often be met by paralleling two MOSFETs for Q1 and using
a single device for Q2. Note that using a higher P MAX value
Table 4. Recommended MOSFETs for LTC1753 Applications
TYPICAL INPUT
PARTS
Siliconix SUD50N03-10
D-PAK
Siliconix Si4410DY
SO-8
ON Semiconductor MTD20N03HDL
D PAK
Fairchild FDS6670A
R DS(ON)
AT 25 ° C (m ? )
19
20
35
8
RATED CURRENT (A)
15 at 25 ° C
10 at 100 ° C
10 at 25 ° C
8 at 75 ° C
20 at 25 ° C
16 at 100 ° C
13 at 25 ° C
CAPACITANCE
C ISS (pF)
3200
2700
880
3200
θ JC ( ° C/W)
1.8
—
1.67
25
T JMAX ( ° C)
175
150
150
150
SO-8
Fairchild FDS6680
10
11.5 at 25 ° C
2070
25
150
SO-8
ON Semiconductor MTB75N03HDL
DD PAK
IR IRL3103S
DD PAK
IR IRLZ44
TO-220
Fuji 2SK1388
7.5
14
28
37
75 at 25 ° C
59 at 100 ° C
56 at 25 ° C
40 at 100 ° C
50 at 25 ° C
36 at 100 ° C
35 at 25 ° C
4025
1600
3300
1750
1.0
1.8
1.0
2.08
150
175
175
150
TO-220
Note: Please refer to the manufacturer’s data sheet for testing conditions
and detail information.
1753fa
14
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