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| 型号： | LTC1876EG |
| 厂商： | Linear Technology |
| 文件页数： | 16/36页 |
| 文件大小： | 0K |
| 描述： | IC REG CTRLR BST PWM CM 36-SSOP |
| 标准包装： | 37 |
| 系列： | PolyPhase® |
| PWM 型： | 电流模式 |
| 输出数： | 3 |
| 频率 - 最大： | 360kHz |
| 占空比： | 99.4% |
| 电源电压： | 3.5 V ~ 36 V |
| 降压： | 是 |
| 升压： | 是 |
| 回扫： | 无 |
| 反相： | 无 |
| 倍增器： | 无 |
| 除法器： | 无 |
| Cuk： | 无 |
| 隔离： | 无 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 36-SSOP（0.209"，5.30mm 宽） |
| 包装： | 管件 |
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LTC1876
APPLICATIO S I FOR ATIO
then, sub-logic level threshold MOSFETs (V GS(TH) < 3V)
should be used. Pay close attention to the BV DSS specifi-
cation for the MOSFETs as well; most of the logic level
MOSFETs are limited to 30V or less.
Selection criteria for the power MOSFETs include the “ON”
resistance R DS(ON) , reverse transfer capacitance C RSS ,
input voltage and maximum output current. When the
LTC1876 is operating in continuous mode the duty cycles
for the top and bottom MOSFETs are given by:
The term (1 + δ ) is generally given for a MOSFET in the
form of a normalized R DS(ON) vs temperature curve, but
δ = 0.005/ ° C can be used as an approximation for low
voltage MOSFETs. C RSS is usually specified in the MOS-
FET characteristics. The constant k = 1.7 can be used to
estimate the contributions of the two terms in the main
switch dissipation equation.
The Schottky diode D1 shown in Figure 1 conducts during
the dead-time between the conduction of the two power
MOSFETs. This prevents the body diode of the bottom
Main Switch Duty Cycle =
V OUT
V IN
MOSFET from turning on, storing charge during the dead-
time and requiring a reverse recovery period that could
cost as much as 3% in efficiency at high V IN . A 1A to 3A
Synchronous Switch Duty Cycle =
V IN – V OUT
V IN
Schottky is generally a good compromise for both regions
of operation due to the relatively small average current.
Larger diodes result in additional transition losses due to
their larger junction capacitance.
( ) ( 1 + δ ) R DS ( ON ) +
V OUT
P MAIN =
k ( V IN ) ( I MAX )( C RSS )( )
( ) ( 1 + δ ) R DS ( ON )
V IN – V OUT
P SYNC =
The MOSFET power dissipations at maximum output
current are given by:
2
I MAX
V IN
2
f
2
I MAX
V IN
where δ is the temperature dependency of R DS(ON) and k
is a constant inversely related to the gate drive current.
Both MOSFETs have I 2 R losses while the topside N-channel
equation includes an additional term for transition losses,
which are highest at high input voltages. For V IN < 20V the
high current efficiency generally improves with larger
MOSFETs, while for V IN > 20V the transition losses rapidly
increase to the point that the use of a higher R DS(ON) device
with lower C RSS actually provides higher efficiency. The
synchronous MOSFET losses are greatest at high input
voltage when the top switch duty factor is low or during a
short-circuit when the synchronous switch is on close to
100% of the period.
C IN Selection
The selection of C IN is simplified by the multiphase archi-
tecture and its impact on the worst-case RMS current
drawn through the input network (battery/fuse/capacitor).
It can be shown that the worst case RMS current occurs
when only one controller is operating. The controller with
the highest (V OUT )(I OUT ) product needs to be used in the
formula below to determine the maximum RMS current
requirement. Increasing the output current, drawn from
the other out-of-phase controller, will actually decrease
the RMS ripple current from this maximum value (see
Figure 4). The out-of-phase technique typically reduces
the input capacitor’s RMS ripple current by a factor of 30%
to 70% when compared to a single phase power supply
solution.
The type of input capacitor, value and ESR rating have
efficiency effects that need to be considered in the selec-
tion process. The capacitance value chosen should be
sufficient to store adequate charge to keep high peak
battery currents down. 20 μ F to 40 μ F is usually sufficient
for a 25W output supply operating at 200kHz. The ESR of
the capacitor is important for capacitor power dissipation
as well as overall battery efficiency. All of the power (RMS
ripple current ? ESR) not only heats up the capacitor but
wastes power from the battery.
1876fa
16
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相关代理商/技术参数 |
参数描述 |
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| LTC1876EG#PBF | 功能描述:IC REG CTRLR BST PWM CM 36-SSOP RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:PolyPhase® 标准包装:4,500 系列:PowerWise® PWM 型:控制器 输出数:1 频率 - 最大:1MHz 占空比:95% 电源电压:2.8 V ~ 5.5 V 降压:是 升压:无 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:无 工作温度:-40°C ~ 125°C 封装/外壳:6-WDFN 裸露焊盘 包装:带卷 (TR) 配用:LM1771EVAL-ND - BOARD EVALUATION LM1771 其它名称:LM1771SSDX |
| LTC1876EG#TR | 功能描述:IC REG CTRLR BST PWM CM 36-SSOP RoHS:否 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:PolyPhase® 标准包装:4,500 系列:PowerWise® PWM 型:控制器 输出数:1 频率 - 最大:1MHz 占空比:95% 电源电压:2.8 V ~ 5.5 V 降压:是 升压:无 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:无 工作温度:-40°C ~ 125°C 封装/外壳:6-WDFN 裸露焊盘 包装:带卷 (TR) 配用:LM1771EVAL-ND - BOARD EVALUATION LM1771 其它名称:LM1771SSDX |
| LTC1876EG#TRPBF | 功能描述:IC REG CTRLR BST PWM CM 36-SSOP RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:PolyPhase® 标准包装:4,500 系列:PowerWise® PWM 型:控制器 输出数:1 频率 - 最大:1MHz 占空比:95% 电源电压:2.8 V ~ 5.5 V 降压:是 升压:无 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:无 工作温度:-40°C ~ 125°C 封装/外壳:6-WDFN 裸露焊盘 包装:带卷 (TR) 配用:LM1771EVAL-ND - BOARD EVALUATION LM1771 其它名称:LM1771SSDX |
| LTC1877EMS8 | 功能描述:IC REG BUCK SYNC ADJ 0.6A 8MSOP RoHS:否 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 开关稳压器 系列:- 标准包装:2,500 系列:- 类型:降压（降压） 输出类型:固定 输出数:1 输出电压:1.2V，1.5V，1.8V，2.5V 输入电压:2.7 V ~ 20 V PWM 型:- 频率 - 开关:- 电流 - 输出:50mA 同步整流器:是 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:10-TFSOP，10-MSOP（0.118"，3.00mm 宽）裸露焊盘 包装:带卷 (TR) 供应商设备封装:10-MSOP 裸露焊盘 |
| LTC1877EMS8#PBF | 功能描述:IC REG BUCK SYNC ADJ 0.6A 8MSOP RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 开关稳压器 系列:- 标准包装:250 系列:- 类型:降压（降压） 输出类型:固定 输出数:1 输出电压:1.2V 输入电压:2.05 V ~ 6 V PWM 型:电压模式 频率 - 开关:2MHz 电流 - 输出:500mA 同步整流器:是 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:6-UFDFN 包装:带卷 (TR) 供应商设备封装:6-SON（1.45x1） 产品目录页面:1032 (CN2011-ZH PDF) 其它名称:296-25628-2 |
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