参数资料
型号: LTC3613IWKH#PBF
厂商: Linear Technology
文件页数: 19/36页
文件大小: 0K
描述: IC REG BUCK SYNC ADJ 15A 56QFN
标准包装: 40
类型: 降压(降压)
输出类型: 可调式
输出数: 1
输出电压: 0.6 V ~ 5.5 V
输入电压: 4.5 V ~ 24 V
PWM 型: 电流模式
频率 - 开关: 200kHz ~ 1MHz
电流 - 输出: 15A
同步整流器:
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 56-VFQFN 裸露焊盘
包装: 管件
供应商设备封装: 56-QFN 多焊盘(7x9)
LTC3613
APPLICATIONS INFORMATION
Top MOSFET Driver Supply (C B , D B )
An external bootstrap capacitor, C B , connected to the BOOST
pin supplies the gate drive voltage for the topside MOSFET.
This capacitor is charged through diode D B from INTV CC
when the switch node is low. When the top MOSFET turns
on, the switch node rises to V IN and the BOOST pin rises to
approximately PV IN + INTV CC . The boost capacitor needs to
store approximately 100 times the gate charge required by
the top MOSFET. In most applications a 0.1μF to 0.47μF, X5R
or X7R dielectric capacitor is adequate. It is recommended
that the BOOST capacitor be no larger than 10% of the
INTV CC capacitor, C VCC , to ensure that the C VCC can supply
the upper MOSFET gate charge and BOOST capacitor under
all operating conditions. Variable frequency in response
to load steps offers superior transient performance but
requires higher instantaneous gate drive. Gate charge
demands are greatest in high frequency low duty factor
applications under high dI/dt load steps and at start-up.
In order to minimize SW node ringing and EMI, connect a
5Ω to 10Ω resistor in series with the BOOST pin. Make the
C B and D B connections on the other side of the resistor. This
series resistor helps to slow down the SW node rise time,
limiting the high dI/dt current through the top MOSFET that
causes SW node ringing.
INTV CC Regulator and EXTV CC Power
The LTC3613 features a PMOS low dropout linear regulator
(LDO) that supplies power to INTV CC from the SV IN supply.
INTV CC powers much of the LTC3613’s internal circuitry.
The LDO regulates the voltage at the INTV CC pin to 5.3V.
The LDO can supply a maximum current of 50mA RMS and
must be bypassed to ground with a minimum of 4.7μF
ceramic capacitor. Good bypassing is needed to supply
the high transient currents required by the power MOSFET
gate drivers.
When the voltage applied to EXTV CC pin rises above 4.6V,
the INTV CC LDO is turned off and the EXTV CC is connected
to INTV CC with an internal switch. This switch remains on
as long as the voltage applied to EXTV CC remains above
4.4V. Using the EXTV CC allows the MOSFET driver and
control power to be derived from the LTC3613’s switching
regulator output during normal operation and from the
LDO when the output is out of regulation (e.g., start-up,
short circuit). If more than 50mA RMS current is required
through EXTV CC , then an external Schottky diode can be
added between the EXTV CC and INTV CC pins. Do not apply
more than 6V to the EXTV CC pin and make sure that this
external voltage source is less than SV IN .
Significant efficiency and thermal gains can be realized
by powering INTV CC from the switching regulator output,
since the V IN current resulting from the driver and control
currents will be scaled by a factor of (Duty Cycle)/(Switcher
Efficiency).
The following list summarizes the four possible connec-
tions for EXTV CC :
1. EXTV CC left open (or grounded). This will cause INTV CC
to be powered from the internal 5.3V LDO resulting
in an efficiency penalty of up to 10% at high input
voltages.
2. EXTV CC connected directly to switching regulator output
V OUT > 4.6V. This provides the highest efficiency.
3. EXTV CC connected to an external supply. If a 4.6V or
greater external supply is available, it may be used to
power EXTV CC provided that the external supply is suf-
ficient enough for MOSFET gate drive requirements.
4. EXTV CC connected to an output-derived boost network.
For 3.3V and other low voltage converters, efficiency
gains can still be realized by connecting EXTV CC to an
output-derived voltage that has been boosted to greater
than 4.6V.
3613fa
19
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