参数资料
型号: LTC3827IUH#TR
厂商: LINEAR TECHNOLOGY CORP
元件分类: 稳压器
英文描述: 3 A DUAL SWITCHING CONTROLLER, 580 kHz SWITCHING FREQ-MAX, PQCC32
封装: 5 X 5 MM, PLASTIC, MO-220WHHD, QFN-32
文件页数: 9/36页
文件大小: 451K
代理商: LTC3827IUH#TR
LTC3827
17
3827ff
APPLICATIONS INFORMATION
selected. As inductance increases, core losses go down.
Unfortunately, increased inductance requires more turns
of wire and therefore copper losses will increase.
Ferrite designs have very low core loss and are preferred
at high switching frequencies, so design goals can con-
centrate on copper loss and preventing saturation. Ferrite
core material saturates “hard,” which means that induc-
tance collapses abruptly when the peak design current is
exceeded. This results in an abrupt increase in inductor
ripple current and consequent output voltage ripple. Do
not allow the core to saturate!
Power MOSFET and Schottky Diode (Optional)
Selection
Two external power MOSFETs must be selected for each
controller in the LTC3827: one N-channel MOSFET for the
top (main) switch, and one N-channel MOSFET for the
bottom (synchronous) switch.
The peak-to-peak drive levels are set by the INTVCCvoltage.
This voltage is typically 5V during start-up (see EXTVCC
Pin Connection). Consequently, logic-level threshold
MOSFETs must be used in most applications. The only
exception is if low input voltage is expected (VIN < 5V);
then, sub-logic level threshold MOSFETs (VGS(TH) < 3V)
should be used. Pay close attention to the BVDSS speci-
cation for the MOSFETs as well; most of the logic level
MOSFETs are limited to 30V or less.
Selection criteria for the power MOSFETs include the “ON”
resistance, RDS(ON), Miller capacitance, CMILLER, input
voltage and maximum output current. Miller capacitance,
CMILLER, can be approximated from the gate charge curve
usually provided on the MOSFET manufacturers’ data
sheet. CMILLER is equal to the increase in gate charge
along the horizontal axis while the curve is approximately
at divided by the specied change in VDS. This result is
then multiplied by the ratio of the application applied VDS
to the Gate charge curve specied VDS. When the IC is
operating in continuous mode the duty cycles for the top
and bottom MOSFETs are given by:
Main Switch Duty Cycle =
VOUT
VIN
Synchronous Switch Duty Cycle =
VIN –VOUT
VIN
The MOSFET power dissipations at maximum output
current are given by:
PMAIN =
VOUT
VIN
IMAX
()2 1+
()R
DS(ON) +
VIN
()2 IMAX
2
RDR
() C
MILLER
()
1
VINTVCC –VTHMIN
+
1
VTHMIN
f
()
PSYNC =
VIN –VOUT
VIN
IMAX
()
2 1+ δ
()RDS(ON)
where δ is the temperature dependency of RDS(ON) and
RDR (approximately 2Ω) is the effective driver resistance
at the MOSFET’s Miller threshold voltage. VTHMIN is the
typical MOSFET minimum threshold voltage.
Both MOSFETs have I2R losses while the topside N-channel
equation includes an additional term for transition losses,
which are highest at high input voltages. For VIN < 20V
the high current efciency generally improves with larger
MOSFETs, while for VIN > 20V the transition losses rapidly
increase to the point that the use of a higher RDS(ON)device
with lower CMILLER actually provides higher efciency. The
synchronous MOSFET losses are greatest at high input
voltage when the top switch duty factor is low or during
a short-circuit when the synchronous switch is on close
to 100% of the period.
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