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参数资料
| 型号： | LTC3830-1ES8#TRPBF |
| 厂商： | Linear Technology |
| 文件页数： | 12/24页 |
| 文件大小： | 0K |
| 描述： | IC REG CTRLR BUCK PWM VM 8-SOIC |
| 标准包装： | 2,500 |
| PWM 型： | 电压模式 |
| 输出数： | 1 |
| 频率 - 最大： | 250kHz |
| 占空比： | 95% |
| 电源电压： | 3 V ~ 8 V |
| 降压： | 是 |
| 升压： | 无 |
| 回扫： | 无 |
| 反相： | 无 |
| 倍增器： | 无 |
| 除法器： | 无 |
| Cuk： | 无 |
| 隔离： | 无 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 包装： | 带卷 (TR) |
LTC3830/LTC3830-1
APPLICATIO S I FOR ATIO
Input Supply Considerations/Charge Pump
The 16-lead LTC3830 requires four supply voltages to
operate: V IN for the main power input, PV CC1 and PV CC2 for
MOSFET gate drive and a clean, low ripple V CC for the
LTC3830 internal circuitry (Figure 6). The LTC3830-1 and
the 8-lead LTC3830 have the PV CC2 and V CC pins tied
together inside the package (Figure 7). This pin, brought
out as V CC /PV CC2 , has the same low ripple requirements
as the 16-lead part, but must also be able to supply the gate
drive current to Q2.
In many applications, V CC can be powered from V IN
throughanRCfilter.Thissupplycanbeaslowas3V.The
low quiescent current (typically 800 μ A) allows the use of
relatively large filter resistors and correspondingly small
filter capacitors. 100 ? and 4.7 μ F usually provide ad-
equate filtering for V CC . For best performance, connect the
4.7 μ F bypass capacitor as close to the LTC3830 V CC pin as
possible.
Gate drive for the top N-channel MOSFET Q1 is supplied
from PV CC1 . This supply must be above V IN (the main
power supply input) by at least one power MOSFET V GS(ON)
for efficient operation. An internal level shifter allows PV CC1
to operate at voltages above V CC and V IN , up to 14V maxi-
mum. This higher voltage can be supplied with a separate
supply, or it can be generated using a charge pump.
Gate drive for the bottom MOSFET Q2 is provided through
PV CC2 for the 16-lead LTC3830 or V CC /PV CC2 for the
LTC3830-1 and the 8-lead LTC3830. This supply only
needs to be above the power MOSFET V GS(ON) for efficient
operation. PV CC2 can also be driven from the same supply/
charge pump for the PV CC1 , or it can be connected to a
lower supply to improve efficiency.
Figure 8 shows a tripling charge pump circuit that can be
used to provide 2V IN and 3V IN gate drive for the external
top and bottom MOSFETs respectively. These should fully
enhance MOSFETs with 5V logic level thresholds. This
circuit provides 3V IN – 3V F to PV CC1 while Q1 is ON and
2V IN – 2V F to PV CC2 where V F is the forward voltage of the
Schottky diodes. The circuit requires the use of Schottky
diodes to minimize forward drop across the diodes at
start-up. The tripling charge pump circuit can rectify any
ringing at the drain of Q2 and provide more than 3V IN at
PV CC1 ; a 12V zener diode should be included from PV CC1
to PGND to prevent transients from damaging the circuitry
at PV CC1 or the gate of Q1.
The charge pump capacitors refresh when the G2 pin goes
high and the switch node is pulled low by Q2. The G2 on-
time becomes narrow when LTC3830 operates at maxi-
mum duty cycle (95% typical), which can occur if the input
supply rises more slowly than the soft-start capacitor or
the input voltage droops during load transients. If the G2
on-time gets so narrow that the switch node fails to pull
completely to ground, the charge pump voltage may
collapse or fail to start, causing excessive dissipation in
external MOSFET Q1. This is most likely with low V CC
voltages and high switching frequencies, coupled with
large external MOSFETs which slow the G2 and switch
node slew rates.
D Z
12V
1N5242
1N5817
1N5817
V IN
1N5817
10 μ F
PV CC2
PV CC1
0.1 μ F
0.1 μ F
G1
Q1
L O
V OUT
LTC3830
G2
Q2
+
C OUT
3830 F08
Figure 8. Tripling Charge Pump
3830fa
12
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相关代理商/技术参数 |
参数描述 |
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| LTC3830EGN | 功能描述:IC REG CTRLR BUCK PWM VM 16-SSOP RoHS:否 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 标准包装:4,500 系列:PowerWise® PWM 型:控制器 输出数:1 频率 - 最大:1MHz 占空比:95% 电源电压:2.8 V ~ 5.5 V 降压:是 升压:无 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:无 工作温度:-40°C ~ 125°C 封装/外壳:6-WDFN 裸露焊盘 包装:带卷 (TR) 配用:LM1771EVAL-ND - BOARD EVALUATION LM1771 其它名称:LM1771SSDX |
| LTC3830EGN#PBF | 功能描述:IC REG CTRLR BUCK PWM VM 16-SSOP RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 标准包装:2,000 系列:- PWM 型:电流模式 输出数:1 频率 - 最大:1MHz 占空比:50% 电源电压:9 V ~ 10 V 降压:无 升压:是 回扫:是 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:无 工作温度:-40°C ~ 85°C 封装/外壳:8-TSSOP（0.173"，4.40mm 宽） 包装:带卷 (TR) |
| LTC3830EGN#TR | 功能描述:IC REG CTRLR BUCK PWM VM 16-SSOP RoHS:否 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 标准包装:2,500 系列:- PWM 型:电流模式 输出数:1 频率 - 最大:500kHz 占空比:96% 电源电压:4 V ~ 36 V 降压:无 升压:是 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:无 工作温度:-40°C ~ 125°C 封装/外壳:24-WQFN 裸露焊盘 包装:带卷 (TR) |
| LTC3830EGN#TRPBF | 功能描述:IC REG CTRLR BUCK PWM VM 16-SSOP RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 标准包装:2,500 系列:- PWM 型:电流模式 输出数:1 频率 - 最大:500kHz 占空比:96% 电源电压:4 V ~ 36 V 降压:无 升压:是 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:无 工作温度:-40°C ~ 125°C 封装/外壳:24-WQFN 裸露焊盘 包装:带卷 (TR) |
| LTC3830ES | 功能描述:IC REG CTRLR BUCK PWM VM 16-SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 标准包装:2,000 系列:- PWM 型:电流模式 输出数:1 频率 - 最大:1MHz 占空比:50% 电源电压:9 V ~ 10 V 降压:无 升压:是 回扫:是 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:无 工作温度:-40°C ~ 85°C 封装/外壳:8-TSSOP（0.173"，4.40mm 宽） 包装:带卷 (TR) |
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