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| 型号： | LTC4011CFE#PBF |
| 厂商： | Linear Technology |
| 文件页数： | 4/26页 |
| 文件大小： | 0K |
| 描述： | IC BATT CHARGER HIEFF 20TSSOP |
| 标准包装： | 74 |
| 功能： | 充电管理 |
| 电池化学： | 镍镉（NiCd）、镍金属氢化物（NiMH） |
| 电源电压： | 4.5 V ~ 34 V |
| 工作温度： | 0°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 20-TSSOP（0.173"，4.40mm 宽）裸露焊盘 |
| 供应商设备封装： | 20-TSSOP-EP |
| 包装： | 管件 |
| 产品目录页面： | 1341 (CN2011-ZH PDF) |
LTC4011
ELECTRICAL CHARACTERISTICS The L indicates specifications which apply over the full operating
temperature range, otherwise specifications are at T A = 25°C. V CC = 12V, BAT = 4.8V, GND = PGND = 0V, unless otherwise noted.
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
T MAXC
V TEMP(D)
V TEMP(P)
Maximum Fast Charge Temperature
(Note 8)
V TEMP Disable Threshold Voltage
Pause Threshold Voltage
V TEMP Decreasing, Fast Charge
l
l
l
57
2.8
130
60
63
3.3
280
°C
V
mV
Charger Timing
? t TIMER
Internal Time Base Error
l
–10
10
%
? t MAX
Programmable Timer Error
R TIMER = 49.9k
l
–20
20
%
PowerPath Control
V FR
V OL(INFET)
V OH(INFET)
t OFF(INFET)
INFET Forward Regulation Voltage
Output Voltage Low
Output Voltage High
INFET OFF Delay Time
DCIN – V CC
V CC – INFET, No Load
V CC – INFET, No Load
C LOAD = 10nF, INFET to 50%
l
l
l
15
3.75
55
5.2
0
3
100
7
50
15
mV
V
mV
μs
Status and Chemistry Select
V OL
I LKG
I IH(VCDIV)
Output Voltage Low (I LOAD = 10mA)
Output Leakage Current
Input Current High
V CDIV
All Other Status Outputs
All Status Outputs Inactive, V OUT = V CC
V CDIV = V BAT (Shutdown)
l
l
l
l
–10
–1
435
300
700
600
10
1
mV
mV
μA
μA
V IL
V IH
Input Voltage Low
Input Voltage High
CHEM (NiMH)
CHEM (NiCd)
l
l
2.85
900
mV
V
I IL
I IH
Input Current Low
Input Current High
CHEM = GND
CHEM = 3.3V
l
l
–20
–20
–5
20
μA
μA
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC4011C is guaranteed to meet performance specifications
from 0°C to 70°C. Specifications over the 0°C to 85°C operating
temperature range are assured by design, characterization and correlation
with statistical process controls.
Note 3: Operating junction temperature T J (in °C) is calculated from
the ambient temperature T A and the total continuous package power
dissipation P D (in watts) by the formula:
T J = T A + θ JA ? P D
Refer to the Applications Information section for details. This IC includes
overtemperature protection that is intended to protect the device during
momentary overload conditions. Junction temperature will exceed 125°C
when overtemperature protection is active. Continuous operation above
the specified maximum operating junction temperature may result in
device degradation or failure.
Note 4: All current into device pins is positive. All current out of device
pins is negative. All voltages are referenced to GND, unless otherwise
specified.
Note 5: These limits are guaranteed by correlation to wafer level
measurements.
Note 6: Output current may be limited by internal power dissipation. Refer
to the Applications Information section for details.
Note 7: Either TGATE V OH may apply for 7.5V < V CC < 9V.
Note 8: These limits apply specifically to the thermistor network shown in
Figure 5 in the Applications Information section with the values specified
for a 10k NTC ( β of 3750). Limits are then guaranteed by specific V TEMP
voltage measurements during test.
4011fb
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