参数资料
| 型号： | LV5768M-TLM-H |
| 厂商： | ON Semiconductor |
| 文件页数： | 12/15页 |
| 文件大小： | 0K |
| 描述： | IC REG CTRLR BUCK PWM CM MFP14S |
| 标准包装： | 1,000 |
| PWM 型： | 电流模式 |
| 输出数： | 1 |
| 频率 - 最大： | 500kHz |
| 占空比： | 95% |
| 电源电压： | 8.5 V ~ 42 V |
| 降压： | 是 |
| 升压： | 无 |
| 回扫： | 无 |
| 反相： | 无 |
| 倍增器： | 无 |
| 除法器： | 无 |
| Cuk： | 无 |
| 隔离： | 无 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | * |
| 包装： | * |
LV5768M
3
Irip_out =
1
2
×
VOUT (VIN - VOUT)
L × fOSC × VIN
[Arms]
(18)
It is advisable to use ceramic capacitor in combination with electrolytic capacitor to reject high frequency noise. The
electrolytic capacitor can be low ESR aluminum electrolytic capacitor or polymer aluminum electrolytic capacitor.
9) Inductor selection
L1: Caution is required due to the heat generation from choke coil caused by overload and load short. The inductance
value is determined by output ripple voltage (Vrip) and the impedance of output capacitor for switching frequency.
The minimum inductance is obtained by the equation (19).
L min =
VIN - VOUT
fOSC × VIN
×
VOUT × RC
Vrip
[μH]
(19)
In the above equation, ESR is used in place of the impedance of output capacitor. The reason is, the impedance of
output capacitor for switching frequency is close to RC in many cases. However with ceramic capacitor, real
impedance is used instead of RC.
Ex)VIN(max)=24V, VOUT=12V, Vrip=100mV, RC=9m ? , fOSC=100kHz
L min =
24V - 12V
100k × 24V
×
12V × 9m
20mV
(20)
≈ 27 [μH]
In the actual part selection, ripple voltage is defined first, then capacitor and inductor are selected. Take the
maximum value and minimum value of input voltage, output voltage and load variation into consideration. Also, the
ripple current of inductor is used as basis for output inductor selection in many cases. Ripple current is obtained by
the equation (21).
Irip =
VIN - VOUT
fOSC × L
× D [A]
(21)
D represents duty cycle defined by VOUT/VIN.
The important term is the ripple current represented as Irip/IOUT. As long as the ripple element is less than 50%, it
should not be a problem. If the ripple element is higher, inductor loss becomes significant.
Ex)VIN=24V, VOUT=12V, fOSC=100kHz, L=45 μ H
Irip =
24V - 12V
100k × 45μ
× 0.5
(22)
= 1.3 [A]
10) Power consumption of high side MOSFET
The power consumption in the external high side MOSFET is represented by conduction loss and switching loss.
The conduction loss of MOSFET is obtained by the following equation (23).
Psat = IO 2 × RDS(ON) × D
[W]
(23)
Since RDS(ON) is affected by temperature, it is advisable to confirm the actual FET temperature and data sheet.
The switching loss of high side MOSFET is obtained by the following equation (24).
Psw = VIN × IO × tSW × fSW [W]
(24)
IO: DC output current
tSW: Rise time of switching waveform
fSW: Switching frequency
PS No.A1988-12/15
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