参数资料
| 型号： | LV5768M-TLM-H |
| 厂商： | ON Semiconductor |
| 文件页数： | 13/15页 |
| 文件大小： | 0K |
| 描述： | IC REG CTRLR BUCK PWM CM MFP14S |
| 标准包装： | 1,000 |
| PWM 型： | 电流模式 |
| 输出数： | 1 |
| 频率 - 最大： | 500kHz |
| 占空比： | 95% |
| 电源电压： | 8.5 V ~ 42 V |
| 降压： | 是 |
| 升压： | 无 |
| 回扫： | 无 |
| 反相： | 无 |
| 倍增器： | 无 |
| 除法器： | 无 |
| Cuk： | 无 |
| 隔离： | 无 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | * |
| 包装： | * |
LV5768M
The junction temperature of high side MOSFET is obtained by the following equation (25).
Tj = Ta + (Psat + Psw) × θ ja [W]
(25)
θ ja: Package heat resistor
Tj should not exceed the Tjmax as stated in the data sheet.
11) Power consumption of low side MOSFET
The power consumption in low side MOSFET consists of conduction loss from RDS (ON) as well as from body
diode and reverse recovery loss. The conduction loss due to RDS (ON) is obtainable by the equation (23) which is
represented in the equation (26).
Psat = IO 2 × RDS(ON) × (1-D) [W]
(26)
The conduction loss from body diode occurs when the body diode is conducted forwardly between high side off and
low side off zone, which is represented in the equation (27).
Pdf = 2 × IO × Vf × tdelay × fSW [W]
Vf: Forward voltage of body diode
tdelay: Delay time immediately before surge of SW node
The total power consumption of low side MOSFET is obtained by the equation (28).
Pls = Psat + Pdf [W]
(27)
(28)
12) Power consumption of LV5768M
The total power consumption of LV5768M is represented in the equation (29) given that the same MOSFET is
selected for high side and low side.
Pd_ic = (2 × Qg × fSW + ICCA) × VIN [W]
(29)
ICCA: IC consumption current when switching is stopped.
PS No.A1988-13/15
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